...
首页> 外文期刊>Advanced energy materials >Covalent Encapsulation of Sulfur in a MOF-Derived S, N-Doped Porous Carbon Host Realized via the Vapor-Infiltration Method Results in Enhanced Sodium–Sulfur Battery Performance
【24h】

Covalent Encapsulation of Sulfur in a MOF-Derived S, N-Doped Porous Carbon Host Realized via the Vapor-Infiltration Method Results in Enhanced Sodium–Sulfur Battery Performance

机译:通过蒸汽渗透方法实现的MOF衍生的S,N掺杂的多孔碳宿主中的共价封装硫,这导致增强钠 - 硫磺电池性能

获取原文
获取原文并翻译 | 示例
           

摘要

Practical applications of room temperature sodium-sulfur batteries are still inhibited by the poor conductivity and slow reaction kinetics of sulfur, and dissolution of intermediate polysulfides in the commonly used electrolytes. To address these issues, starting from a novel 3D Zn-based metal-organic framework with 2,5-thiophenedicarboxylic acid and 1,4-bis(pyrid-4-yl) benzene as ligands, a S, N-doped porous carbon host with 3D tubular holes for sulfur storage is fabricated. In contrast to the commonly used melt-diffusion method to confine sulfur physically, a vapor-infiltration method is utilized to achieve sulfur/carbon composite with covalent bonds, which can join electrochemical reaction without low voltage activation. A polydopamine derived N-doped carbon layer is further coated on the composite to confine the high-temperature-induced gas-phase sulfur inside the host. S and N dopants increase the polarity of the carbon host to restrict diffusion of sulfur, and its 3D porous structure provides a large storage area for sulfur. As a result, the obtained composite shows outstanding electrochemical performance with 467 mAh g(-1) (1262 mAh g((sulfur))(-1)) at 0.1 A g(-1), 270 mAh g(-1) (730 mAh g((sulfur))(-1)) after 1000 cycles at 1 A g(-1) and 201 mAh g(-1) (543 mAh g((sulfur))(-1)) at 5.0 A g(-1).
机译:室温的实际应用仍然抑制了硫的导电性和慢速反应动力学差,以及常用电解质中中间体多硫化物的溶解。为了解决这些问题,从一种与2,5-噻吩羧酸和1,4-双(Pyrid-4-基)苯作为配体的新型3D Zn的金属 - 有机骨架,S,N掺杂多孔碳宿主使用3D管状孔来制造硫储存。与常用的熔体扩散方法对比物理上限制硫,利用蒸汽渗透方法与共价键实现硫/碳复合物,其可以加入电化学反应而不低电压激活。聚二氨基氨基衍生的N掺杂的碳层进一步涂覆在复合材料上,以限制宿主内的高温诱导的气相硫。 S和N掺杂剂增加碳宿主以限制硫的扩散的极性,其3D多孔结构为硫提供了大的存储区域。结果,所得复合材料显示出具有467mAhg(-1)(1262mAhg((硫))( - 1)),270mAhg(-1)( - 在1A(-1)和201 mah g(-1)的1000次循环后,730 mAhg((硫))( - 1))(543mAhg((硫))( - 1))为5.0 a g (-1)。

著录项

  • 来源
    《Advanced energy materials》 |2020年第23期|2000931.1-2000931.10|共10页
  • 作者单位

    City Univ Hong Kong Dept Mat Sci & Engn CFP Kowloon 83 Tat Chee Ave Hong Kong 999077 Peoples R China;

    City Univ Hong Kong Dept Mat Sci & Engn CFP Kowloon 83 Tat Chee Ave Hong Kong 999077 Peoples R China;

    Xi An Jiao Tong Univ Sch Elect Engn State Key Lab Elect Insulat & Power Equipment CNRE Xian 710049 Peoples R China;

    Nankai Univ Tianjin Key Lab Rare Earth Mat & Applicat Natl Inst Adv Mat Sch Mat Sci & Engn Ctr Rare Earth & Inorgan Funct Tianjin 300350 Peoples R China;

    Northeast Normal Univ Dept Chem 5268 Renming St Changchun 130024 Peoples R China;

    City Univ Hong Kong Sch Energy & Environm Ctr Super Diamond & Adv Films COSDAF Kowloon 83 Tat Chee Ave Hong Kong 999077 Peoples R China;

    City Univ Hong Kong Dept Mat Sci & Engn CFP Kowloon 83 Tat Chee Ave Hong Kong 999077 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    metal-organic frameworks; S; N-doped carbon hosts; sodium-sulfur batteries; vapor-infiltration method;

    机译:金属有机框架;S;n掺杂的碳主体;硫磺电池;蒸汽渗透法;

相似文献

  • 外文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号