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Engineering Cobalt Phosphide (CoP) Thin Film Catalysts for Enhanced Hydrogen Evolution Activity on Silicon Photocathodes

机译:工程钴磷化钴(COP)薄膜催化剂,用于增强硅光电量的氢进化活性

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摘要

Transition metal phosphide catalysts have recently emerged as active, earth abundant alternatives to precious metals for the hydrogen evolution reaction in acid. High performance, scalable catalysts are necessary for the successful implementation of photoelectrochemical water splitting devices, which have the potential to generate hydrogen in a sustainable manner. Herein, a general synthetic route is reported to produce transition metal phosphide thin films, which is used to fabricate cobalt phosphide (CoP) catalysts with high average turnover frequency (TOFavg), 0.48 H-2 s(-1) and 1.0 H-2 s(-1) at 100 and 120 mV overpotential, respectively. Furthermore, it is shown that CoP thin films can be applied to silicon photoabsorbers to generate one of the most active precious metal-free crystalline silicon photocathodes to date, achieving -10 mA cm(-2) at +0.345 V vs. reversible hydrogen electrode. The synthesis route presented here provides a platform for both fundamental studies of well-defined electrocatalysts and the fabrication of high-performance photoelectrodes.
机译:过渡金属磷化物催化剂最近出现为活性,地球含有氢气进化反应的贵金属的丰富替代品。高性能,可伸缩的催化剂是为了成功实施光电化学水分解装置是必需的,这具有以可持续的方式产生氢的可能性。据报道,据报道一般的合成途径产生过渡金属磷化铝薄膜,其用于制造具有高平均周转频率(TOFAVG)的钴磷化物(COP)催化剂,0.48H-2 S(-1)和1.0H-2 S(-1)分别在100和120 mV过势。此外,示出了COP薄膜可以应用于硅光吸收剂,以产生迄今为止最活跃的贵重金属结晶硅光电容器之一,在+ 0.345V与可逆氢电极实现-10mA cm(-2) 。本文呈现的合成途径为熟明的电催化剂和高性能光电极的制造提供了一种平台。

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