On the Relation between the Open-Circuit Voltage and Quasi-Fermi Level Splitting in Efficient Perovskite Solar Cells

摘要

Today's perovskite solar cells (PSCs) are limited mainly by their open-circuit voltage (V-OC) due to nonradiative recombination. Therefore, a comprehensive understanding of the relevant recombination pathways is needed. Here, intensity-dependent measurements of the quasi-Fermi level splitting (QFLS) and of the V-OC on the very same devices, including pin-type PSCs with efficiencies above 20%, are performed. It is found that the QFLS in the perovskite lies significantly below its radiative limit for all intensities but also that the V-OC is generally lower than the QFLS, violating one main assumption of the Shockley-Queisser theory. This has far-reaching implications for the applicability of some well-established techniques, which use the V-OC as a measure of the carrier densities in the absorber. By performing drift-diffusion simulations, the intensity dependence of the QFLS, the QFLS-V-OC offset and the ideality factor are consistently explained by trap-assisted recombination and energetic misalignment at the interfaces. Additionally, it is found that the saturation of the V-OC at high intensities is caused by insufficient contact selectivity while heating effects are of minor importance. It is concluded that the analysis of the V-OC does not provide reliable conclusions of the recombination pathways and that the knowledge of the QFLS-V-OC relation is of great importance.