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首页> 外文期刊>Active and Passive Electronic Components >Some investigations on the anisotropy of the chemical etching of (hk0) and (hhl) silicon plates in a NaOH 35/100 solution. Part II: 3D etching shapes, analysis And comparison with koh 56/100
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Some investigations on the anisotropy of the chemical etching of (hk0) and (hhl) silicon plates in a NaOH 35/100 solution. Part II: 3D etching shapes, analysis And comparison with koh 56/100

机译:关于在NaOH 35/100溶液中化学蚀刻(hk0)和(hhl)硅片的各向异性的一些研究。第二部分:3D蚀刻形状,分析以及与koh 56/100的比较

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摘要

this paper deals with the micromachining of various (hk0) and (hhl) membrane-mesa structures in a NaOH 35/100 solution. Final etching shapes of micromachined structures show a marked anisotropy of type 1. Etching shapes are analysed in terms of the kinematic and tensorial model for the anisotropic dissolution of crystals. Some of crystallographic planes limiting membranes and mesa are identified from a stereographic analysis of top contours. Conclusions of this study are in close agreement with a previous work.
机译:本文研究了在NaOH 35/100溶液中各种(hk0)和(hhl)膜台面结构的微加工。微加工结构的最终蚀刻形状显示出明显的1型各向异性。根据晶体的各向异性溶解的运动学和张量模型分析了蚀刻形状。从顶部轮廓的立体分析确定了一些限制膜和台面的晶体学平面。这项研究的结论与以前的工作非常吻合。

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