Dynistor Switches for Micro- and Nanosecond Power Pulse Generators

摘要

Gigawatt power switches for microsecond range applications based on an assembly of Reverse Switch-on Dynistors (RSD) and fast compact generators for nanosecond range applications based on new semiconductor devices Deep Level Dynistors (DLD) are discussed. As an example design and operation principles of 25 kV, 300 kA, 600 μs pulse duration power switch based on 76 mm diameter RSDs and 25 kV, 10 kA switch based on 16 mm diameter DLDs are described. It is possible to increase the pulse power by increasing both diameter of dynistor structure and number of devices connected in series or in parallel.