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From Two- to Three-Dimensional van der Waals LayeredStructures of Boron Crystals: An Ab Initio Study

机译:从二维到三维范德华分层硼晶体的结构:从头算研究

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摘要

A remarkable recent advancement has been the successful synthesis of two-dimensional boron monolayers on metal substrates. However, although up to 16 possible bulk allotropes of boron have been reported, none of them possess van der Waals (vdW) layered structures. In this work, starting from the experimentally synthesized monolayer boron sheet (β12 borophene), we explored the possibility for forming vdW layered bulk boron. We found that two β12 borophene sheets cannot form a stable vdW bilayer structure, as covalent-like B–B bonds are formed between them because of the peculiar bonding. Interestingly, when the covalently bonded bilayer borophene sheets are stacked on top of each other, three-dimensional (3D) layered structures are constructed via vdW interlayer interactions, rather than covalent. The 3D vdW layered structures were found to be dynamically stable. The interlayer binding energy is about 20 meV/Å2, which is close to the weakly bound graphene layers in graphite (∼16 meV/Å2). Furthermore, the density functional theory predicted electronic band structure testifies that these vdW bulk boron crystals can behave as good conductors. The insights obtainedfrom this work suggest an opportunity to discover new vdW layeredstructures of bulk boron, which is expected to be crucial to numerousapplications ranging from microelectronic devices to energy storagedevices.
机译:最近的显着进步是在金属基底上成功地合成了二维硼单层。然而,尽管已经报道了多达16种可能的硼同素异形体,但它们都没有范德华(vdW)分层结构。在这项工作中,我们从实验合成的单层硼片(β12硼烯)开始,探讨了形成vdW层状块状硼的可能性。我们发现,两个β12硼烷片不能形成稳定的vdW双层结构,因为它们之间由于特殊的键合而形成了共价键状的B–B键。有趣的是,当共价键合的双层氮硼烷薄片彼此堆叠时,通过vdW层间相互作用而不是共价键构建三维(3D)分层结构。发现3D vdW分层结构是动态稳定的。层间结合能约为20 meV /Å 2 ,接近石墨中的弱结合石墨烯层(〜16 meV /Å 2 )。此外,密度泛函理论预测的电子能带结构证明这些vdW块状硼晶体可以充当良好的导体。获得的见解通过这项工作,可以发现新的分层vdW大量硼的结构,预计对许多硼至关重要应用范围从微电子设备到能量存储设备。

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