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Comparative Computational Study of Electronic Excitationsof Neutral and Charged Small Oligothiophenes and Their ExtrapolationsBased on Simple Models

机译:电子激发的比较计算研究和带电的小寡聚噻吩的合成及其外推基于简单模型

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摘要

This work reports electronic excitation energies of neutral and charged oligothiophenes (OTn) with repeat unit n = 2–6 computed by routinely used semiempirical and time-dependent density functional theory (TD-DFT) methods. More specifically, for OTn, OTn+, and OTn, we calculated vertical transition energies for electronic absorption spectroscopy employing the Zerner’s version of intermediate neglect differential overlap method for structures optimized by the PM6 semiempirical method and the TD-DFT method with three different functionals, B3LYP, BVP86, and M06-2X, for structures optimized by the ground-state DFT method employing the same functionals. We also calculated vertical transition energies for the emission spectroscopy from the lowest singlet excited states by employing the TD-DFT method for the structures optimized for the lowest singlet excited states. In addition to computational results in vacuum, solution phase data calculated at the level of polarizable continuum model are reported and compared with availableexperimental data. Most of the data are fitted reasonably well bytwo simple model functions, one based on a Frenkel exciton theoryand the other based on the model of independent electrons in a boxwith sinusoidal modulation of potential. Despite similar levels offitting performance, the two models produce distinctively differentasymptotic values of excitation energies. Comparison of these withavailable experimental and computational data suggests that the valuesbased on the exciton model, while seemingly overestimating, are closerto true values than those based on the other model. This assessmentis confirmed by additional calculations for a larger oligomer. Thefitting parameters offer new means to understand the relationshipbetween electronic excitations of OTs and their sizes and suggestthe feasibility of constructing simple coarse-grained exciton-bathmodels applicable for aggregates of OTs.
机译:这项工作报告了通过常规使用的半经验和随时间变化的密度泛函理论(TD-DFT)方法计算的重复单元n = 2–6的中性和带电低聚噻吩(OTn)的电子激发能。更具体地说,对于OTn,OTn + 和OTn ,我们使用Zerner版本的中间忽略差分重叠法计算电子吸收光谱的垂直跃迁能,以优化结构PM6半经验方法和具有三种不同功能的TD-DFT方法B3LYP,BVP86和M06-2X,用于通过采用相同功能的基态DFT方法优化的结构。我们还通过针对最低单重态激发态优化的结构采用TD-DFT方法,从最低的单重态激发态计算了发射光谱的垂直跃迁能。除了在真空中的计算结果外,还报告了在可极化连续介质模型级别上计算出的固溶相数据,并将其与可用的相比较。实验数据。大多数数据都可以通过以下方式很好地拟合两个简单的模型函数,一个基于Frenkel激子理论另一个基于盒子中独立电子的模型正弦调制电位。尽管水平相似拟合性能,两个模型产生明显不同激发能的渐近值。这些与现有的实验和计算数据表明这些值基于激子模型,虽然看起来高估了达到比基于其他模型的真实值。这项评估对于较大的低聚物,通过额外的计算得到了证实。的拟合参数提供了了解关系的新方法OTs的电子激发与其大小之间的关系,并提出建议构建简单的粗粒激子浴的可行性适用于OT集合的模型。

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