首页> 美国卫生研究院文献>The Journal of Biological Chemistry >An Intersubunit Interaction between S4-S5 Linker and S6 Is Responsible for the Slow Off-gating Component in Shaker K+ Channels
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An Intersubunit Interaction between S4-S5 Linker and S6 Is Responsible for the Slow Off-gating Component in Shaker K+ Channels

机译:S4-S5接头和S6之间的亚基间相互作用负责摇床K +通道中的慢闸门组件

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摘要

Voltage-gated ion channels are controlled by the membrane potential, which is sensed by peripheral, positively charged voltage sensors. The movement of the charged residues in the voltage sensor may be detected as gating currents. In Shaker K+ channels, the gating currents are asymmetric; although the on-gating currents are fast, the off-gating currents contain a slow component. This slow component is caused by a stabilization of the activated state of the voltage sensor and has been suggested to be linked to ion permeation or C-type inactivation. The molecular determinants responsible for the stabilization, however, remain unknown. Here, we identified an interaction between Arg-394, Glu-395, and Leu-398 on the C termini of the S4-S5 linker and Tyr-485 on the S6 of the neighboring subunit, which is responsible for the development of the slow off-gating component. Mutation of residues involved in this intersubunit interaction modulated the strength of the associated interaction. Impairment of the interaction still led to pore opening but did not exhibit slow gating kinetics. Development of this interaction occurs under physiological ion conduction and is correlated with pore opening. We, thus, suggest that the above residues stabilize the channel in the open state.
机译:电压门控离子通道由膜电位控制,膜电位由外围带正电的电压传感器感测。电压传感器中带电残留物的运动可以检测为门控电流。在振荡器K + 通道中,门控电流是不对称的。尽管导通电流很快,但关断电流包含一个缓慢的分量。这种缓慢的成分是由电压传感器激活状态的稳定引起的,并且已被认为与离子渗透或C型失活有关。然而,负责稳定的分子决定因素仍然未知。在这里,我们确定了S4-S5接头C末端的Arg-394,Glu-395和Leu-398与相邻亚基S6的Tyr-485之间的相互作用。选通组件。参与该亚基间相互作用的残基突变调节了相关相互作用的强度。相互作用的削弱仍然导致孔打开,但是没有展现出缓慢的门控动力学。这种相互作用的发生是在生理离子传导下发生的,并与开孔有关。因此,我们建议上述残基将通道稳定在开放状态。

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