Highly Effective Methods of Obtaining N-Doped Graphene by Gamma Irradiation

摘要

The design and fabrication of a new effective manufacturing method of heteroatom-doped carbon materials is still ongoing. In this paper, we present alternative and facile methods to obtain N-rich graphene with the use of low energy gamma radiation. This method was used as a pure and facile method for altering the physical and chemical properties of graphene. The obtained materials have an exceptionally high N content—up to 4 wt %. (dry method) and up to 2 wt %. (wet method). High-resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectra and X-ray photoelectron spectroscopy (XPS) studies allowed us to evaluate the quality of the obtained materials. The presented results will provide new insights in designing and optimizing N-doped carbon materials potentially for the development of anode or cathode materials for electrochemical device applications, especially supercapacitors, metal–air batteries and fuel cells. Nitrogen atoms are exclusively bonded as quaternary groups. The method is expandable to the chemical insertion of other heteroatoms to graphene, especially such as sulfur, boron or phosphorus.