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Molecular basis for functional connectivity between the voltage sensor and the selectivity filter gate in

机译:用于电压传感器与选择性滤波器栅极之间的功能连接的分子基础

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摘要

In Shaker K+ channels, the S4-S5 linker couples the voltage sensor (VSD) and pore domain (PD). Another coupling mechanism is revealed using two W434F-containing channels: L361R:W434F and L366H:W434F. In L361R:W434F, W434F affects the L361R VSD seen as a shallower charge-voltage (Q-V) curve that crosses the conductance-voltage (G-V) curve. In L366H:W434F, L366H relieves the W434F effect converting a non-conductive channel in a conductive one. We report a chain of residues connecting the VSD (S4) to the selectivity filter (SF) in the PD of an adjacent subunit as the molecular basis for voltage sensor selectivity filter gate (VS-SF) coupling. Single alanine substitutions in this region (L409A, S411A, S412A, or F433A) are enough to disrupt the VS-SF coupling, shown by the absence of Q-V and G-V crossing in L361R:W434F mutant and by the lack of ionic conduction in the L366H:W434F mutant. This residue chain defines a new coupling between the VSD and the PD in voltage-gated channels.
机译:在振动筛K +通道中,S4-S5接头耦合电压传感器(VSD)和孔域(PD)。使用含两种W434F的通道显示另一种偶联机构:L361R:W434F和L366H:W434F。在L361R:W434F中,W434F影响L361R VSD作为越来越浅电压(Q-V)曲线,其交叉电导 - 电压(G-V)曲线。在L366H:W434F中,L366H缓解W434F效应在导电频道中转换非导电通道。我们报告了将VSD(S4)连接到相邻子单元PD的选择性滤波器(SF)的残基链作为电压传感器选择性滤波器栅极(VS-SF)耦合的分子基。该区域中的单丙氨酸取代(L409A,S411A,S412A或F433A)足以破坏VS-SF耦合,通过L361R:W434F突变体中没有QV和GV交叉而显示,并通过L366H中的离子传导缺乏离子传导:W434F突变体。该残留链在电压门控通道中定义了VSD和PD之间的新耦合。

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