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Charge Displacement Analysis—A Tool to Theoretically Characterize the Charge Transfer Contribution of Halogen Bonds

机译:电荷位移分析-理论上表征卤素键电荷转移贡献的工具

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摘要

Theoretical bonding analysis is of prime importance for the deep understanding of the various chemical interactions, covalent or not. Among the various methods that have been developed in the last decades, the analysis of the Charge Displacement function (CD) demonstrated to be useful to reveal the charge transfer effects in many contexts, from weak hydrogen bonds, to the characterization of σ hole interactions, as halogen, chalcogen and pnictogen bonding or even in the decomposition of the metal-ligand bond. Quite often, the CD analysis has also been coupled with experimental techniques, in order to give a complete description of the system under study. In this review, we focus on the use of CD analysis on halogen bonded systems, describing the most relevant literature examples about gas phase and condensed phase systems. Chemical insights will be drawn about the nature of halogen bond, its cooperativity and its influence on metal-ligand bond components.
机译:理论键合分析对于深入了解各种化学相互作用(共价与否)至关重要。在过去几十年中开发出的各种方法中,对电荷位移函数(CD)的分析被证明可用于揭示从弱氢键到σ空穴相互作用的表征等许多情况下的电荷转移效应,如卤素,硫族元素和光原性键甚至分解成金属-配体键。通常,CD分析还结合了实验技术,以便对所研究的系统进行完整的描述。在这篇综述中,我们着重于在卤素键合系统上使用CD分析,描述了有关气相和冷凝相系统的最相关文献实例。将对卤素键的性质,其协同作用及其对金属-配体键组分的影响进行化学分析。

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