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Photoionization Modeling of Titan’s Dayside Ionosphere

机译:泰坦白天电离层的光电离建模

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摘要

Previous modeling studies of Titan’s dayside ionosphere predict electron number densities that are roughly a factor of 2 higher than those observed by the RPWS/Langmuir probe. The issue can equivalently be described as the ratio between the calculated electron production rates and the square of the observed electron number densities resulting in roughly a factor of 4 higher effective recombination coefficient than expected from the ion composition and the electron temperature. Here we make an extended reassessment of Titan’s dayside ionization balance, focusing on 34 flybys between TA and T120. Using a recalibrated data set and by taking the presence of negative ions into account, we arrive at lower effective recombination coefficients compared with earlier studies. The values are still higher than expected from the ion composition and the electron temperature, but by a factor of ~2–3 instead of a factor of ~4. We have also investigated whether the derived effective recombination coefficients display dependencies on the solar zenith angle (SZA), the integrated solar EUV intensity (<80 nm), and the corotational plasma ram direction (RAM), and found statistically significant trends, which may be explained by a declining photoionization against the background ionization by magnetospheric particles (trends in SZA and RAM) and altered photochemistry (trend in EUV). We find that a series of flybys that occurred during solar minimum (2008) and with similar flyby geometries are associated with enhanced values of the effective recombination coefficient compared with the remaining data set, which also suggests a chemistry dependence on the sunlight conditions.
机译:先前对Titan白天电离层进行的建模研究预测,电子数密度比RPWS / Langmuir探针观测到的高约2倍。该问题可以等效地描述为计算出的电子生产率与所观察到的电子数密度的平方之比,这导致有效复合系数比离子组成和电子温度所预期的高约4倍。在这里,我们将重新评估Titan的日间电离平衡,重点是TA和T120之间的34次飞越。使用重新校准的数据集并考虑到负离子的存在,与早期研究相比,我们得出了更低的有效重组系数。该值仍高于离子组成和电子温度的预期值,但约为〜2-3的系数,而不是约为〜4的系数。我们还研究了推导的有效重组系数是否显示出对太阳天顶角(SZA),积分太阳EUV强度(<80 nm)和电浆等离子体夯向(RAM)的依赖性,并发现了统计学上显着的趋势,这可能可以解释为,相对于由磁层颗粒引起的背景电离(SZA和RAM中的趋势)和改变了的光化学(EUV中的趋势)而言,光电离的下降与背景电离的下降有关。我们发现,与其余数据集相比,在太阳最低峰(2008年)期间发生的一系列掠过现象和类似的掠过几何形状与有效重组系数的增加值相关联,这也表明化学对阳光条件的依赖性。

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