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Two distinct voltage-sensing domains control voltage sensitivity and kinetics of current activation in CaV1.1 calcium channels

机译:两个不同的电压感应域控制CaV1.1钙通道中的电压敏感性和电流激活动力学

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摘要

Alternative splicing of the skeletal muscle CaV1.1 voltage-gated calcium channel gives rise to two channel variants with very different gating properties. The currents of both channels activate slowly; however, insertion of exon 29 in the adult splice variant CaV1.1a causes an ∼30-mV right shift in the voltage dependence of activation. Existing evidence suggests that the S3–S4 linker in repeat IV (containing exon 29) regulates voltage sensitivity in this voltage-sensing domain (VSD) by modulating interactions between the adjacent transmembrane segments IVS3 and IVS4. However, activation kinetics are thought to be determined by corresponding structures in repeat I. Here, we use patch-clamp analysis of dysgenic (CaV1.1 null) myotubes reconstituted with CaV1.1 mutants and chimeras to identify the specific roles of these regions in regulating channel gating properties. Using site-directed mutagenesis, we demonstrate that the structure and/or hydrophobicity of the IVS3–S4 linker is critical for regulating voltage sensitivity in the IV VSD, but by itself cannot modulate voltage sensitivity in the I VSD. Swapping sequence domains between the I and the IV VSDs reveals that IVS4 plus the IVS3–S4 linker is sufficient to confer CaV1.1a-like voltage dependence to the I VSD and that the IS3–S4 linker plus IS4 is sufficient to transfer CaV1.1e-like voltage dependence to the IV VSD. Any mismatch of transmembrane helices S3 and S4 from the I and IV VSDs causes a right shift of voltage sensitivity, indicating that regulation of voltage sensitivity by the IVS3–S4 linker requires specific interaction of IVS4 with its corresponding IVS3 segment. In contrast, slow current kinetics are perturbed by any heterologous sequences inserted into the I VSD and cannot be transferred by moving VSD I sequences to VSD IV. Thus, CaV1.1 calcium channels are organized in a modular manner, and control of voltage sensitivity and activation kinetics is accomplished by specific molecular mechanisms within the IV and I VSDs, respectively.
机译:骨骼肌CaV1.1电压门控钙通道的选择性剪接产生两个具有非常不同的门控特性的通道变异。两个通道的电流激活缓慢。但是,在成人剪接变体CaV1.1a中插入外显子29会导致激活电压依赖性约30mV右移。现有证据表明,重复IV(包含外显子29)中的S3-S4连接子通过调节相邻跨膜片段IVS3和IVS4之间的相互作用来调节该电压感测域(VSD)中的电压敏感性。但是,活化动力学被认为是由重复序列I中的相应结构决定的。在这里,我们使用由CaV1.1突变体和嵌合体重构的致病性(CaV1.1 null)肌管的膜片钳分析来确定这些区域在肌内的特定作用。调节通道选通特性。使用定点诱变,我们证明IVS3–S4接头的结构和/或疏水性对于调节IV VSD中的电压灵敏度至关重要,但其本身不能调节I VSD中的电压灵敏度。 I和IV VSD之间的交换序列域显示IVS4加IVS3-S4接头足以向I VSD赋予类似CaV1.1a的电压依赖性,而IS3-S4接头加IS4足以转移CaV1.1e电压对IV VSD的依赖性。跨膜螺旋S3和S4与I和IV VSD的任何不匹配都会引起电压灵敏度的右移,这表明IVS3–S4接头对电压灵敏度的调节要求IVS4及其对应的IVS3段发生特定的相互作用。相反,插入I VSD的任何异源序列会干扰慢速电流动力学,并且不能通过将VSD I序列移至VSD IV来转移。因此,CaV1.1钙通道以模块化方式组织,并且分别通过IV和I VSD内的特定分子机制来控制电压敏感性和激活动力学。

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