首页> 美国卫生研究院文献>The Journal of General Physiology >Changes in Local S4 Environment Provide a Voltage-sensing Mechanism for Mammalian Hyperpolarization–activated HCN Channels
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Changes in Local S4 Environment Provide a Voltage-sensing Mechanism for Mammalian Hyperpolarization–activated HCN Channels

机译:本地S4环境的变化为哺乳动物超极化激活的HCN通道提供了一种电压感应机制

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摘要

The positively charged S4 transmembrane segment of voltage-gated channels is thought to function as the voltage sensor by moving charge through the membrane electric field in response to depolarization. Here we studied S4 movements in the mammalian HCN pacemaker channels. Unlike most voltage-gated channel family members that are activated by depolarization, HCN channels are activated by hyperpolarization. We determined the reactivity of the charged sulfhydryl-modifying reagent, MTSET, with substituted cysteine (Cys) residues along the HCN1 S4 segment. Using an HCN1 channel engineered to be MTS resistant except for the chosen S4 Cys substitution, we determined the reactivity of 12 S4 residues to external or internal MTSET application in either the closed or open state of the channel. Cys substitutions in the NH2-terminal half of S4 only reacted with external MTSET; the rates of reactivity were rapid, regardless of whether the channel was open or closed. In contrast, Cys substitutions in the COOH-terminal half of S4 selectively reacted with internal MTSET when the channel was open. In the open state, the boundary between externally and internally accessible residues was remarkably narrow (∼3 residues). This suggests that S4 lies in a water-filled gating canal with a very narrow barrier between the external and internal solutions, similar to depolarization-gated channels. However, the pattern of reactivity is incompatible with either classical gating models, which postulate a large translational or rotational movement of S4 within a gating canal, or with a recent model in which S4 forms a peripheral voltage-sensing paddle (with S3b) that moves within the lipid bilayer (the KvAP model). Rather, we suggest that voltage sensing is due to a rearrangement in transmembrane segments surrounding S4, leading to a collapse of an internal gating canal upon channel closure that alters the shape of the membrane field around a relatively static S4 segment.
机译:电压门控通道的带正电的S4跨膜片段被认为通过响应去极化使电荷通过膜电场移动,从而起到电压传感器的作用。在这里,我们研究了哺乳动物HCN起搏器通道中的S4运动。与大多数通过去极化激活的电压门控通道族成员不同,HCN通道通过超极化激活。我们确定了带电荷的巯基修饰剂MTSET与沿HCN1 S4片段取代的半胱氨酸(Cys)残基的反应性。除了选择的S4 Cys替换外,使用经过工程设计为具有MTS抗性的HCN1通道,我们确定了12个S4残基在通道的关闭或打开状态下对外部或内部MTSET应用的反应性。 S4 NH2末端一半的Cys取代仅与外部MTSET反应;无论通道是打开还是关闭,反应速度都很快。相反,当通道打开时,S4的COOH末端一半中的Cys取代选择性地与内部MTSET反应。在开放状态下,外部和内部可及残基之间的边界非常狭窄(〜3个残基)。这表明,S4位于充满水的门控通道中,内部和外部溶液之间的屏障非常狭窄,类似于去极化门控通道。但是,反应性模式与经典的门控模型(假设S4在门控管内发生大的平移或旋转运动)不兼容,或者与最近的模型(其中S4形成周围的电压感应板(与S3b)一起移动)不兼容。在脂质双层中(KvA​​P模型)。相反,我们建议电压感应是由于围绕S4的跨膜片段的重排,导致通道关闭时内部门控通道的塌陷,从而改变了相对静态S4片段周围的膜场的形状。

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