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Mechanism of Rectification in Inward-rectifier K+ Channels

机译:内向整流器K +通道的整流机制

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摘要

Rectification in inward-rectifier K+ channels is caused by the binding of intracellular cations to their inner pore. The extreme sharpness of this rectification reflects strong voltage dependence (apparent valence is ∼5) of channel block by long polyamines. To understand the mechanism by which polyamines cause rectification, we examined IRK1 (Kir2.1) block by a series of bis-alkyl-amines (bis-amines) and mono-alkyl-amines (mono-amines) of varying length. The apparent affinity of channel block by both types of alkylamines increases with chain length. Mutation D172N in the second transmembrane segment reduces the channel's affinity significantly for long bis-amines, but only slightly for short ones (or for mono-amines of any length), whereas a double COOH-terminal mutation (E224G and E299S) moderately reduces the affinity for all bis-amines. The apparent valence of channel block increases from ∼2 for short amines to saturate at ∼5 for long bis-amines or at ∼4 for long mono-amines. On the basis of these and other observations, we propose that to block the channel pore one amine group in all alkylamines tested binds near the same internal locus formed by the COOH terminus, while the other amine group of bis-amines, or the alkyl tail of mono-amines, “crawls” toward residue D172 and “pushes” up to 4 or 5 K+ ions outwardly across the narrow K+ selectivity filter. The strong voltage dependence of channel block therefore reflects the movement of charges carried across the transmembrane electrical field primarily by K+ ions, not by the amine molecule itself, as K+ ions and the amine blocker displace each other during block and unblock of the pore. This simple displacement model readily accounts for the classical observation that, at a given concentration of intracellular K+, rectification is apparently related to the difference between the membrane potential and the equilibrium potential for K+ ions rather than to the membrane potential itself.
机译:内向整流子K + 通道中的整流是由于细胞内阳离子与其内孔的结合而引起的。这种整流的极端清晰度反映了长多胺对通道阻滞的强烈电压依赖性(表观价约为5)。为了了解多胺引起整流的机理,我们通过一系列不同长度的双烷基胺(双胺)和单烷基胺(单胺)研究了IRK1(Kir2.1)阻滞。两种类型的烷基胺对通道阻滞的表观亲和力均随链长的增加而增加。第二个跨膜区段中的突变D172N显着降低了通道对长双胺的亲和力,但对短双胺(或任何长度的单胺)仅轻微降低了通道的亲和力,而双COOH端突变(E224G和E299S)则适度降低了通道的亲和力。对所有双胺具有亲和力。通道阻滞的表观价数从短胺的〜2增加到长双胺的〜5饱和或长单胺的〜4饱和。根据这些和其他观察结果,我们建议为了封闭通道孔,所有测试的烷基胺中的一个胺基团结合在由COOH末端形成的相同内部位置附近,而另一个胺基的双胺或烷基尾单胺,“爬行”到残基D172,并通过狭窄的K + 选择性过滤器向外“推动”多达4或5 K + 离子。因此,通道阻滞的强电压依赖性反映了跨膜电场携带的电荷的运动,主要由K + 离子而不是胺分子本身(如K + 离子)传播胺的阻滞剂在孔的阻塞和不阻塞期间彼此移位。这个简单的位移模型很容易解释经典的观察结果,即在给定浓度的细胞内K + 下,精馏显然与膜电位和K + <离子而不是膜电位本身。

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