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Halogen Bonding versus Hydrogen Bonding: A Molecular Orbital Perspective

机译:卤素键与氢键:分子轨道的观点

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摘要

We have carried out extensive computational analyses of the structure and bonding mechanism in trihalides DX⋅⋅⋅A and the analogous hydrogen-bonded complexes DH⋅⋅⋅A (D, X, A=F, Cl, Br, I) using relativistic density functional theory (DFT) at zeroth-order regular approximation ZORA-BP86/TZ2P. One purpose was to obtain a set of consistent data from which reliable trends in structure and stability can be inferred over a large range of systems. The main objective was to achieve a detailed understanding of the nature of halogen bonds, how they resemble, and also how they differ from, the better understood hydrogen bonds. Thus, we present an accurate physical model of the halogen bond based on quantitative Kohn–Sham molecular orbital (MO) theory, energy decomposition analyses (EDA) and Voronoi deformation density (VDD) analyses of the charge distribution. It appears that the halogen bond in DX⋅⋅⋅A arises not only from classical electrostatic attraction but also receives substantial stabilization from HOMO–LUMO interactions between the lone pair of A and the σ* orbital of D–X.
机译:我们已经对三卤化物DX⋅⋅⋅A-和类似的氢键配合物DH⋅⋅⋅A-(D ,X,A = F,Cl,Br,I),使用相对论密度泛函理论(DFT)在零阶正则逼近ZORA-BP86 / TZ2P处。目的是获得一组一致的数据,从中可以推断出各种系统的可靠结构和稳定性趋势。主要目的是要更好地理解卤素键的性质,它们如何相似以及如何与卤素键更好地了解。因此,我们基于定量的Kohn-Sham分子轨道(MO)理论,能量分解分析(EDA)和电荷分布的Voronoi变形密度(VDD)分析,提出了精确的卤素键物理模型。看来DX⋅⋅⋅A-中的卤素键不仅来自经典的静电吸引,而且还因A -和D–X的σ*轨道。

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