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Characterization of MOSFET dosimeters for low‐dose measurements in maxillofacial anthropomorphic phantoms

机译:用于颌面部拟人体模中小剂量测量的MOSFET剂量计的特性

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摘要

The aims of this study were to characterize reinforced metal‐oxide‐semiconductor field‐effect transistor (MOSFET) dosimeters to assess the measurement uncertainty, single exposure low‐dose limit with acceptable accuracy, and the number of exposures required to attain the corresponding limit of the thermoluminescent dosimeters (TLD). The second aim was to characterize MOSFET dosimeter sensitivities for two dental photon energy ranges, dose dependency, dose rate dependency, and accumulated dose dependency. A further aim was to compare the performance of MOSFETs with those of TLDs in an anthropomorphic phantom head using a dentomaxillofacial CBCT device. The uncertainty was assessed by exposing 20 MOSFETs and a Barracuda MPD reference dosimeter. The MOSFET dosimeter sensitivities were evaluated for two photon energy ranges (50–90 kVp) using a constant dose and polymethylmethacrylate backscatter material. MOSFET and TLD comparative point‐dose measurements were performed on an anthropomorphic phantom that was exposed with a clinical CBCT protocol. The MOSFET single exposure low dose limit (25% uncertainty, k = 2) was 1.69 mGy. An averaging of eight MOSFET exposures was required to attain the corresponding TLD (0.3 mGy) low‐dose limit. The sensitivity was 3.09 ± 0.13 mV/mGy independently of the photon energy used. The MOSFET dosimeters did not present dose or dose rate sensitivity but, however, presented a 1% decrease of sensitivity per 1000 mV for accumulated threshold voltages between 8300 mV and 17500 mV. The point doses in an anthropomorphic phantom ranged for MOSFETs between 0.24 mGy and 2.29 mGy and for TLDs between 0.25 and 2.09 mGy, respectively. The mean difference was −8%. The MOSFET dosimeters presented statistically insignificant energy dependency. By averaging multiple exposures, the MOSFET dosimeters can achieve a TLD‐comparable low‐dose limit and constitute a feasible method for diagnostic dosimetry using anthropomorphic phantoms. However, for single in vivo measurements (  1.7 mGy) the sensitivity is too low.PACS number: 87.50.wj
机译:这项研究的目的是表征增强型金属氧化物半导体场效应晶体管(MOSFET)剂量计,以评估测量不确定度,具有可接受精度的单次曝光低剂量限值,以及达到相应极限值所需的曝光次数。热发光剂量计(TLD)。第二个目标是针对两个牙科光子能量范围,剂量依赖性,剂量率依赖性和累积剂量依赖性来表征MOSFET剂量计的灵敏度。另一个目标是使用牙颌面CBCT器件在拟人化幻影头部中比较MOSFET和TLD的性能。通过暴露20个MOSFET和梭子鱼MPD参考剂量计来评估不确定性。使用恒定剂量和聚甲基丙烯酸甲酯背向散射材料,对两个光子能量范围(50–90 kVp)的MOSFET剂量计灵敏度进行了评估。 MOSFET和TLD比较点剂量的测量是通过临床CBCT协议暴露的拟人模型进行的。 MOSFET的单次曝光低剂量限值(25%不确定度,k = 2)为1.69 mGy。为了达到相应的TLD(0.3 mGy)低剂量限值,平均需要MOSFET暴露八次。灵敏度为3.09±0.13 mV / mGy,与所使用的光子能量无关。 MOSFET剂量计没有显示剂量或剂量率灵敏度,但是,对于8300 mV和17500 mV之间的累积阈值电压,每1000 mV灵敏度降低了1%。拟人模型中的点剂量范围分别为MOSFET在0.24 mGy和2.29 mGy之间以及TLD在0.25和2.09 mGy之间。平均差异为−8%。 MOSFET剂量计呈现出统计上无关紧要的能量依赖性。通过对多次曝光进行平均,MOSFET剂量计可以达到TLD可比的低剂量限值,并构成了使用拟人化体模进行诊断剂量测定的可行方法。但是,对于单次体内测量(<1.7 mGy),灵敏度太低.PACS数:87.50.wj

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