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Modulation of Electronic and Optical Anisotropy Properties of ML-GaS by Vertical Electric Field

机译:垂直电场对ML-GaS电子和光学各向异性的调制

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摘要

We investigate the electric-field-dependent optical properties and electronic behaviors of GaS monolayer by using the first-principles calculations. A reversal of the dipole transition from E//c to E⊥c anisotropy is found with a critical external electric field of about 5 Vm. Decomposed projected band contributions exhibit asymmetric electronic structures in GaS interlayers under the external electric field, which explains the evolution of the absorption preference. Spatial distribution of the partial charge and charge density difference reveal that the strikingly reversed optical anisotropy in GaS ML is closely linked to the additional crystal field originated from the external electric field. These results pave the way for experimental research and provide a new perspective for the application of the monolayer GaS-based two-dimensional electronic and optoelectronic devices.
机译:我们通过使用第一性原理计算来研究GaS单层的电场依赖性光学性质和电子行为。偶极子从E // c跃迁到E⊥c各向异性的逆转被发现具有大约5V / nm的临界外部电场。分解的投影带贡献在外部电场作用下在GaS夹层中显示出不对称的电子结构,这解释了吸收偏好的演变。局部电荷的空间分布和电荷密度差表明,GaS ML中强烈反转的光学各向异性与源自外部电场的附加晶体场紧密相关。这些结果为实验研究铺平了道路,并为基于单层GaS的二维电子和光电器件的应用提供了新的视角。

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