首页> 美国卫生研究院文献>Scientific Reports >Role of interface coupling inhomogeneity in domain evolution in exchange bias
【2h】

Role of interface coupling inhomogeneity in domain evolution in exchange bias

机译:界面耦合不均一性在交换偏差域演化中的作用

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

Models of exchange-bias in thin films have been able to describe various aspects of this technologically relevant effect. Through appropriate choices of free parameters the modelled hysteresis loops adequately match experiment, and typical domain structures can be simulated. However, the use of these parameters, notably the coupling strength between the systems' ferromagnetic (F) and antiferromagnetic (AF) layers, obscures conclusions about their influence on the magnetization reversal processes. Here we develop a 2D phase-field model of the magnetization process in exchange-biased CoO/(Co/Pt)×n that incorporates the 10 nm-resolved measured local biasing characteristics of the antiferromagnet. Just three interrelated parameters set to measured physical quantities of the ferromagnet and the measured density of uncompensated spins thus suffice to match the experiment in microscopic and macroscopic detail. We use the model to study changes in bias and coercivity caused by different distributions of pinned uncompensated spins of the antiferromagnet, in application-relevant situations where domain wall motion dominates the ferromagnetic reversal. We show the excess coercivity can arise solely from inhomogeneity in the density of biasing- and anti-biasing pinned uncompensated spins in the antiferromagnet. Counter to conventional wisdom, irreversible processes in the latter are not essential.
机译:薄膜中的交换偏向模型已经能够描述这种技术相关效应的各个方面。通过适当选择自由参数,建模的磁滞回线可以充分匹配实验,并且可以模拟典型的磁畴结构。但是,使用这些参数,尤其是系统铁磁(F)和反铁磁(AF)层之间的耦合强度,掩盖了它们对磁化反转过程的影响的结论。在这里,我们开发了在交流偏置的CoO /(Co / Pt)×n中磁化过程的二维相场模型,该模型结合了10μnm分辨的反铁磁体的测量局部偏置特性。只需将三个相互关联的参数设置为所测量的铁磁体的物理量和所测量的未补偿自旋的密度,就足以在微观和宏观细节上与实验相匹配。我们使用该模型来研究在畴壁运动在铁磁反转中占主导地位的与应用相关的情况下,反铁磁体的钉扎式未补偿自旋的不同分布所引起的偏置和矫顽力的变化。我们显示了过量的矫顽力可能仅由反铁磁体中偏置和反偏置固定未补偿自旋的密度不均匀引起。与传统观点相反,后者的不可逆过程不是必需的。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号