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Ultrahigh Performance C60 Nanorod Large Area Flexible Photoconductor Devices via Ultralow Organic and Inorganic Photodoping

机译:通过超低有机和无机光掺杂实现超高性能C60纳米棒大面积柔性光电导体器件

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摘要

One dimensional single-crystal nanorods of C60 possess unique optoelectronic properties including high electron mobility, high photosensitivity and an excellent electron accepting nature. In addition, their rapid large scale synthesis at room temperature makes these organic semiconducting nanorods highly attractive for advanced optoelectronic device applications. Here, we report low-cost large-area flexible photoconductor devices fabricated using C60 nanorods. We demonstrate that the photosensitivity of the C60 nanorods can be enhanced ~400-fold via an ultralow photodoping mechanism. The photodoped devices offer broadband UV-vis-NIR spectral tuneability, exhibit a detectivitiy >109 Jones, an external quantum efficiency of ~100%, a linear dynamic range of 80 dB, a rise time 60 µs and the ability to measure ac signals up to ~250 kHz. These figures of merit combined are among the highest reported for one dimensional organic and inorganic large-area planar photoconductors and are competitive with commercially available inorganic photoconductors and photoconductive cells. With the additional processing benefits providing compatibility with large-area flexible platforms, these devices represent significant advances and make C60 nanorods a promising candidate for advanced photodetector technologies.
机译:C60的一维单晶纳米棒具有独特的光电特性,包括高电子迁移率,高光敏性和出色的电子接受性。此外,它们在室温下的快速大规模合成使得这些有机半导体纳米棒对先进的光电器件应用具有高度的吸引力。在这里,我们报告使用C60纳米棒制造的低成本大面积柔性光电导体设备。我们证明,C60纳米棒的光敏性可以通过超低光掺杂机制提高〜400倍。这些光掺杂器件具有宽带UV-vis-NIR光谱可调性,检出率> 10 9 Jones,外部量子效率约为100%,线性动态范围为80 dB,上升时间为60 µs并能够测量高达250 kHz的交流信号。这些综合的品质因数是一维有机和无机大面积平面光电导体的最高记录,并且可与市售无机光电导体和光电导电池竞争。这些额外的处理优势提供了与大面积灵活平台的兼容性,这些设备代表了重要的进步,并使C60纳米棒成为先进光电探测器技术的有希望的候选者。

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