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Junction formation and current transport mechanisms in hybrid n-Si/PEDOT:PSS solar cells

机译:混合n-Si / PEDOT:PSS太阳能电池的结形成和电流传输机制

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摘要

We investigated hybrid inorganic-organic solar cells combining monocrystalline n-type silicon (n-Si) and a highly conductive polymer poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS). The build-in potential, photo- and dark saturation current at this hybrid interface are monitored for varying n-Si doping concentrations. We corroborate that a high build-in potential forms at the hybrid junction leading to strong inversion of the n-Si surface. By extracting work function and valence band edge of the polymer from ultraviolet photoelectron spectroscopy, a band diagram of the hybrid n-Si/PEDOT:PSS heterojunction is presented. The current-voltage characteristics were analyzed using Schottky and abrupt pn-junction models. The magnitude as well as the dependence of dark saturation current on n-Si doping concentration proves that the transport is governed by diffusion of minority charge carriers in the n-Si and not by thermionic emission of majorities over a Schottky barrier. This leads to a comprehensive explanation of the high observed open-circuit voltages of up to 634 mV connected to high conversion efficiency of almost 14%, even for simple planar device structures without antireflection coating or optimized contacts. The presented work clearly shows that PEDOT:PSS forms a hybrid heterojunction with n-Si behaving similar to a conventional pn-junction and not, like commonly assumed, a Schottky junction.
机译:我们研究了混合的有机-无机太阳能电池,其结合了单晶n型硅(n-Si)和高导电性聚合物聚(3,4-乙撑二氧噻吩)-聚(苯乙烯磺酸盐)(PEDOT:PSS)。监测该混合界面处的内建电势,光和暗饱和电流,以检测变化的n-Si掺杂浓度。我们证实,在杂化结处会形成高内建电位,从而导致n-Si表面的强烈反转。通过从紫外光电子能谱中提取聚合物的功函数和价带边缘,给出了杂化n-Si / PEDOT:PSS异质结的能带图。使用肖特基和突变pn结模型分析了电流-电压特性。暗饱和电流对n-Si掺杂浓度的大小及其依赖性证明,该传输受n-Si中少数载流子扩散的支配,而不是受肖特基势垒上方多数的热电子发射支配。这导致对观察到的高达634 mV的高开路电压的全面解释,这与几乎14%的高转换效率相连,即使对于没有防反射涂层或优化触点的简单平面器件结构也是如此。呈现的工作清楚地表明,PEDOT:PSS与n-Si形成杂化异质结,其行为与常规pn结相似,并且与通常假定的肖特基结不同。

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