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Understanding Phase-Change Memory Alloys from a Chemical Perspective

机译:从化学角度理解相变记忆合金

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摘要

Phase-change memories (PCM) are associated with reversible ultra-fast low-energy crystal-to-amorphous switching in GeTe-based alloys co-existing with the high stability of the two phases at ambient temperature, a unique property that has been recently explained by the high fragility of the glass-forming liquid phase, where the activation barrier for crystallisation drastically increases as the temperature decreases from the glass-transition to room temperature. At the same time the atomistic dynamics of the phase-change process and the associated changes in the nature of bonding have remained unknown. In this work we demonstrate that key to this behavior is the formation of transient three-center bonds in the excited state that is enabled due to the presence of lone-pair electrons. Our findings additionally reveal previously ignored fundamental similarities between the mechanisms of reversible photoinduced structural changes in chalcogenide glasses and phase-change alloys and offer new insights into the development of efficient PCM materials.
机译:相变存储器(PCM)与GeTe基合金中可逆的超快速低能晶体-非晶态转换相关联,并与环境温度下两相的高稳定性共存,这是最近才发现的独特性能可以用玻璃形成液相的高脆性来解释,其中结晶的活化势垒随着温度从玻璃化转变到室温的降低而急剧增加。同时,相变过程的原子动力学以及键合性质的相关变化仍然未知。在这项工作中,我们证明了这种行为的关键是由于存在孤对电子,因此在激发态下形成了瞬态三中心键。我们的发现还揭示了硫属化物玻璃和相变合金中可逆的光诱导结构变化机理之间先前被忽略的基本相似性,并为有效的PCM材料的开发提供了新的见识。

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