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Tuning near-gap electronic structure interface charge transfer and visible light response of hybrid doped graphene and Ag3PO4 composite: Dopant effects

机译:调整杂化掺杂石墨烯和Ag3PO4复合材料的近能隙电子结构界面电荷转移和可见光响应:掺杂剂效应

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摘要

The enhanced photocatalytic performance of doped graphene (GR)/semiconductor nanocomposites have recently been widely observed, but an understanding of the underlying mechanisms behind it is still out of reach. As a model system to study the dopant effects, we investigate the electronic structures and optical properties of doped GR/Ag3PO4 nanocomposites using the first-principles calculations, demonstrating that the band gap, near-gap electronic structure and interface charge transfer of the doped GR/Ag3PO4(100) composite can be tuned by the dopants. Interestingly, the doping atom and C atoms bonded to dopant become active sites for photocatalysis because they are positively or negatively charged due to the charge redistribution caused by interaction. The dopants can enhance the visible light absorption and photoinduced electron transfer. We propose that the N atom may be one of the most appropriate dopants for the GR/Ag3PO4 photocatalyst. This work can rationalize the available experimental results about N-doped GR-semiconductor composites, and enriches our understanding on the dopant effects in the doped GR-based composites for developing high-performance photocatalysts.
机译:最近已广泛观察到了掺杂石墨烯(GR)/半导体纳米复合材料增强的光催化性能,但对它背后的潜在机理的理解仍然遥不可及。作为研究掺杂剂效应的模型系统,我们使用第一性原理研究了掺杂的GR / Ag3PO4纳米复合材料的电子结构和光学性质,证明了掺杂GR的带隙,近隙电子结构和界面电荷转移/ Ag3PO4(100)复合材料可以通过掺杂剂进行调整。有趣的是,键合到掺杂剂上的掺杂原子和C原子成为光催化的活性位,因为由于相互作用引起的电荷重新分布,它们带正电或负电。掺杂剂可以增强可见光吸收和光致电子转移。我们建议N原子可能是最适合GR / Ag3PO4光催化剂的掺杂剂之一。这项工作可以合理化有关N掺杂GR半导体复合材料的可用实验结果,并丰富我们对掺杂GR基复合材料中掺杂剂效应的理解,以开发高性能光催化剂。

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