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Positive impedance humidity sensors via single-component materials

机译:通过单组分材料的正阻抗湿度传感器

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摘要

Resistivity-type humidity sensors have been investigated with great interest due to the increasing demands in industry, agriculture and daily life. To date, most of the available humidity sensors have been fabricated based on negative humidity impedance, in which the electrical resistance decreases as the humidity increases, and only several carbon composites have been reported to present positive humidity impedance. However, here we fabricate positive impedance humidity sensors only via single-component WO3−x crystals. The resistance of WO3−x crystal sensors in response to relative humidity could be tuned from a negative to positive one by increasing the compositional x. And it was revealed that the positive humidity impedance was driven by the defects of oxygen vacancy. This result will extend the application field of humidity sensors, because the positive humidity impedance sensors would be more energy-efficient, easier to be miniaturized and electrically safer than their negative counterparts for their lower operation voltages. And we believe that constructing vacancies in semiconducting materials is a universal way to fabricate positive impedance humidity sensors.
机译:由于工业,农业和日常生活中需求的增加,电阻型湿度传感器已经引起人们的极大兴趣。迄今为止,大多数可用的湿度传感器都是基于负湿度阻抗制造的,其中电阻随着湿度的增加而降低,并且据报道只有几种碳复合材料具有正湿度阻抗。但是,这里我们仅通过单组分WO3-x晶体制造正阻抗湿度传感器。通过增加成分x,可以将WO3-x晶体传感器对相对湿度的响应电阻从负值调整为正值。揭示了正湿度阻抗是由氧空位缺陷驱动的。该结果将扩展湿度传感器的应用领域,因为正负阻抗传感器由于其较低的工作电压将比负负传感器更具能源效率,更易于小型化和电气安全。而且我们相信在半导体材料中构造空位是制造正阻抗湿度传感器的通用方法。

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