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N-doped graphene-based copper nanocomposite with ultralow electrical resistivity and high thermal conductivity

机译:具有低电阻率和高导热率的N掺杂石墨烯基铜纳米复合材料

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摘要

Nanocomposite with a room-temperature ultra-low resistivity far below that of conventional metals like copper is considered as the next generation conductor. However, many technical and scientific problems are encountered in the fabrication of such nanocomposite materials at present. Here, we report the rapid and efficient fabrication and characterization of a novel nitrogen-doped graphene-copper nanocomposite. Silk fibroin was used as a precursor and placed on a copper substrate, followed by the microwave plasma treatment. This resulted nitrogen-doped graphene-copper composite possesses an electrical resistivity of 0.16 µΩ·cm at room temperature, far lower than that of copper. In addition, the composite has superior thermal conductivity (538 W/m·K at 25 °C) which is 138% of copper. The combination of excellent thermal conductivity and ultra-low electrical resistivity opens up potentials in next-generation conductors.
机译:室温下超低电阻率远低于铜等常规金属的纳米复合材料被认为是下一代导体。然而,目前在此类纳米复合材料的制造中遇到许多技术和科学问题。在这里,我们报告了一种新型的氮掺杂石墨烯-铜纳米复合材料的快速有效的制备和表征。丝素蛋白被用作前体并置于铜基底上,然后进行微波等离子体处理。所得的氮掺杂石墨烯-铜复合材料在室温下的电阻率为0.16 µΩ·cm,远低于铜。此外,该复合材料具有优异的导热率(在25°C时为538 W / m·K),占铜的138%。优异的导热性和超低电阻率的结合,开拓了下一代导体的潜力。

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