首页> 美国卫生研究院文献>Scientific Reports >Evolution of Topological Surface States in Antimony Ultra-Thin Films
【2h】

Evolution of Topological Surface States in Antimony Ultra-Thin Films

机译:锑超薄膜中拓扑表面态的演化

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

Based on an inverted bulk band order, antimony thin films presumably could become topological insulators if quantum confinement effect opens up a gap in the bulk bands. Coupling between topological surface states (TSS) from opposite surfaces, however, tends to degrade or even destroy their novel characters. Here the evolution and coupling of TSS on Sb(111) thin films from 30 bilayers down to 4 bilayers was investigated using in-situ Fourier-transform scanning tunneling spectroscopy and density functional theory computations. On a 30-bilayer sample, quasi-particle interference patterns are generated by the scattering of TSS from the top surface only. As the thickness decreases, inter-surface coupling degrades spin polarisation of TSS and opens up new wavevector-dependent scattering channels, resulting in spin degenerate states in most part of the surface Brillouin zone, whereas the TSS near the zone centre exhibit little inter-surface coupling, so they remain spin-polarised without opening a gap at the Dirac point.
机译:基于反向的体能带阶,如果量子约束效应在体能带中形成一个缺口,则锑薄膜可能会成为拓扑绝缘体。但是,来自相对表面的拓扑表面状态(TSS)之间的耦合往往会降低甚至破坏其新颖性。在这里,使用原位傅里叶变换扫描隧道光谱法和密度泛函理论计算研究了Tb在Sb(111)薄膜上从30双层下降到4双层的演化和耦合。在30双层样品上,仅通过从顶部表面散射TSS来生成准粒子干涉图样。随着厚度的减小,表面间耦合会降低TSS的自旋极化并打开新的依赖于波矢量的散射通道,从而导致大部分表面布里渊区的自旋简并状态,而区域中心附近的TSS几乎没有表面间耦合,因此它们保持自旋极化,而不会在Dirac点上产生间隙。

著录项

代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号