The effect of crystal plane orientation on tribochemical removal of monocrystalline silicon was investigated using an atomic force microscope. Experimental results indicated that the tribochemical removal of silicon by SiO2 microsphere presented strong crystallography-induced anisotropy. Further analysis suggested that such anisotropic tribochemical removal of silicon was not dependent on the crystallography-dependent surface mechanical properties (i.e., hardness and elastic modulus), but was mainly attributed to various atomic planar density and interplanar spacing in different crystal planes. Phenomenological results speculated that higher density of silicon atom could promote the formation of Si-O-Si bonds between the SiO2 microsphere and silicon substrate, resulting in more severe tribochemical material removal. Larger interplanar spacing with smaller energy barrier facilitated the rupture of the Si-Si network with the help of mechanical shearing stress, which caused more serious wear of the silicon surface. The results may help understand the material removal mechanism of silicon and provide useful knowledge for chemical mechanical polishing.
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