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Nanoindentation Induced Deformation and Pop-in Events in a Silicon Crystal: Molecular Dynamics Simulation and Experiment

机译:纳米压痕诱导的硅晶体变形和弹入事件:分子动力学模拟和实验

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摘要

Silicon has such versatile characteristics that the mechanical behavior and deformation mechanism under contact load are still unclear and hence are interesting and challenging issues. Based on combined study using molecular dynamics simulations and experiments of nanoindentation on Si(100), the versatile deformation modes, including high pressure phase transformation (HPPT), dislocation, median crack and surface crack, were found, and occurrence of multiple pop-in events in the load-indentation strain curves was reported. HPPTs are regard as the dominant deformation mode and even becomes the single deformation mode at a small indentation strain (0.107 in simulations), suggesting the presence of a defect-free region. Moreover, the one-to-one relationship between the pop-in events and the deformation modes is established. Three distinct mechanisms are identified to be responsible for the occurrence of multiple pop-in events in sequence. In the first mechanism, HPPTs from Si-I to Si-II and Si-I to bct5 induce the first pop-in event. The formation and extrusion of α-Si outside the indentation cavity are responsible for the subsequent pop-in event. And the major cracks on the surface induces the pop-in event at extreme high load. The observed dislocation burst and median crack beneath the transformation region produce no detectable pop-in events.
机译:硅具有如此多方面的特性,以至于在接触载荷下的机械行为和变形机理仍然不清楚,因此是有趣且具有挑战性的问题。在结合分子动力学模拟研究和在Si(100)上进行纳米压痕实验的基础上,发现了多种多样的变形模式,包括高压相变(HPPT),位错,中位裂纹和表面裂纹,并出现了多次弹出报告了载荷压痕应变曲线中的事件。 HPPT被认为是主要的变形模式,甚至在较小的压痕应变(模拟值为0.107)下甚至成为单一变形模式,表明存在无缺陷区域。此外,建立了弹出事件与变形模式之间的一对一关系。确定了三种不同的机制负责依次发生多个弹出事件。在第一种机制中,从Si-I到Si-II和Si-I到bct5的HPPT诱导了第一个弹出事件。压痕腔外的α-Si的形成和挤出是随后的弹入事件的原因。并且表面上的主要裂纹会在极高的载荷下引发弹出事件。观察到的位错爆裂和转变区域下方的中位裂纹未产生可检测到的弹入事件。

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