首页> 美国卫生研究院文献>Nature Communications >Gate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe2
【2h】

Gate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe2

机译:预测的II型Weyl半金属WTe2中的门可调负纵向磁阻

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

The progress in exploiting new electronic materials has been a major driving force in solid-state physics. As a new state of matter, a Weyl semimetal (WSM), in particular a type-II WSM, hosts Weyl fermions as emergent quasiparticles and may harbour novel electrical transport properties. Nevertheless, such a type-II WSM material has not been experimentally observed. In this work, by performing systematic magneto-transport studies on thin films of a predicted material candidate WTe2, we observe notable negative longitudinal magnetoresistance, which can be attributed to the chiral anomaly in WSM. This phenomenon also exhibits strong planar orientation dependence with the absence along the tungsten chains, consistent with the distinctive feature of a type-II WSM. By applying a gate voltage, we demonstrate that the Fermi energy can be in-situ tuned through the Weyl points via the electric field effect. Our results may open opportunities for implementing new electronic applications, such as field-effect chiral devices.
机译:开发新的电子材料的进步一直是固态物理学的主要动力。作为一种新的物质状态,Weyl半金属(WSM),特别是II型WSM,具有Weyl费米子作为新兴的准粒子,并且可能具有新颖的电传输性质。然而,还没有实验观察到这种II型WSM材料。在这项工作中,通过对预测的候选材料WTe2的薄膜进行系统的磁传输研究,我们观察到了显着的负纵向磁阻,这可以归因于WSM中的手性异常。这种现象还表现出强烈的平面取向依赖性,并且沿钨链不存在,这与II型WSM的独特特征一致。通过施加栅极电压,我们证明费米能量可以通过电场效应通过Weyl点进行原位调整。我们的结果可能会为实施新的电子应用(例如场效应手性设备)带来机会。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号