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Energetics and Electronic Structure of Triangular Hexagonal Boron Nitride Nanoflakes

机译:三角形六方氮化硼纳米薄片的能量学和电子结构

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摘要

We studied the energetics and electronic structures of hexagonal boron nitrogen (h-BN) nanoflakes with hydrogenated edges and triangular shapes with respect to the edge atom species. Our calculations clarified that the hydrogenated h-BN nanoflakes with a triangular shape prefer the N edges rather than B edges irrespective of the flake size. The electronic structure of hydrogenated h-BN nanoflakes depends on the edge atom species and their flake size. The energy gap between the lowest unoccupied (LU) and the highest occupied (HO) states of the nanoflakes with N edges is narrower than that of the nanoflakes with B edges and the band gap of h-BN. The nanoflakes possess peculiar non-bonding states around their HO and LU states for the N and B edges, respectively, which cause spin polarization under hole or electron doping, depending on the edge atom species.
机译:我们研究了六边形硼氮(h-BN)纳米片的能量和电子结构,这些片具有相对于边缘原子物种而言具有氢化边缘和三角形形状的边缘。我们的计算表明,无论薄片大小如何,具有三角形形状的氢化h-BN纳米薄片都倾向于N边缘而不是B边缘。氢化h-BN纳米片的电子结构取决于边缘原子的种类及其片的大小。具有N个边缘的纳米薄片的最低未占据(LU)和最高占据(HO)状态之间的能隙比具有B边缘的纳米薄片和h-BN的带隙窄。纳米薄片分别在其N和B边缘的HO和LU状态附近具有特殊的非键合状态,这会在空穴或电子掺杂下引起自旋极化,具体取决于边缘原子的种类。

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