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Towards femtosecond on-chip electronics based on plasmonic hot electron nano-emitters

机译:迈向基于等离子热电子纳米发射器的飞秒片上电子设备

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摘要

To combine the advantages of ultrafast femtosecond nano-optics with an on-chip communication scheme, optical signals with a frequency of several hundreds of THz need to be down-converted to coherent electronic signals propagating on-chip. So far, this has not been achieved because of the overall slow response time of nanoscale electronic circuits. Here, we demonstrate that 14 fs optical pulses in the near-infrared can drive electronic on-chip circuits with a prospective bandwidth up to 10 THz. The corresponding electronic pulses propagate in macroscopic striplines on a millimeter scale. We exploit femtosecond photoswitches based on asymmetric, nanoscale metal junctions to drive the pulses. The non-linear ultrafast response is based on a plasmonically enhanced, multiphoton absorption resulting in a field emission of ballistic hot electrons propagating across the nanoscale junctions. Our results pave the way towards femtosecond electronics integrated in wafer-scale THz circuits.
机译:为了将超快速飞秒纳米光学器件的优点与片上通信方案相结合,需要将频率为数百THz的光信号下变频为在片上传播的相干电子信号。到目前为止,由于纳米级电子电路的总体响应时间较慢,因此尚未实现。在这里,我们证明了近红外中的14 fs光脉冲可以驱动预期带宽高达10 THz的电子芯片电路。相应的电子脉冲在毫米级的宏观带状线上传播。我们利用基于非对称纳米级金属结的飞秒光电开关来驱动脉冲。非线性超快响应基于等离子体增强的多光子吸收,从而导致沿纳米级结传播的弹道热电子的场发射。我们的研究结果为集成到晶圆级太赫兹电路的飞秒电子学铺平了道路。

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