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Field- and temperature-dependent quantum tunnelling of the magnetisation in a large barrier single-molecule magnet

机译:大势垒单分子磁体中磁化强度的场和温度依赖性量子隧穿

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摘要

Understanding quantum tunnelling of the magnetisation (QTM) in single-molecule magnets (SMMs) is crucial for improving performance and achieving molecule-based information storage above liquid nitrogen temperatures. Here, through a field- and temperature-dependent study of the magnetisation dynamics of [Dy(tBuO)Cl(THF)5][BPh4]·2THF, we elucidate the different relaxation processes: field-independent Orbach and Raman mechanisms dominate at high temperatures, a single-phonon direct process dominates at low temperatures and fields >1 kOe, and a field- and temperature-dependent QTM process operates near zero field. Accounting for the exponential temperature dependence of the phonon collision rate in the QTM process, we model the magnetisation dynamics over 11 orders of magnitude and find a QTM tunnelling gap on the order of 10−4 to 10−5 cm−1. We show that removal of Dy nuclear spins does not suppress QTM, and argue that while internal dipolar fields and hyperfine coupling support QTM, it is the dynamic crystal field that drives efficient QTM.
机译:了解单分子磁体(SMM)中磁化强度(QTM)的量子隧穿对于提高性能并在液氮温度以上实现基于分子的信息存储至关重要。在这里,通过[Dy( t BuO)Cl(THF)5] [BPh4]·2THF的磁化动力学的场和温度相关研究,我们阐明了不同的弛豫过程:在高温下,独立的Orbach和Raman机制占主导地位,在低温和> 1 kOe的磁场中,单声子直接过程占主导地位,与场和温度相关的QTM过程在零场附近运行。考虑到QTM过程中声子碰撞速率的指数温度依赖性,我们对11个数量级的磁化动力学进行建模,并找到QTM隧穿间隙在10 −4 到10 −5 cm -1 。我们表明,去除Dy核自旋不会抑制QTM,并指出尽管内部偶极场和超精细耦合支持QTM,但动态晶场却驱动了有效的QTM。

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