首页> 美国卫生研究院文献>Tissue Engineering. Part A >Enhancement of Cell Ingrowth Proliferation and Early Differentiation in a Three-Dimensional Silicon Carbide Scaffold Using Low-Intensity Pulsed Ultrasound
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Enhancement of Cell Ingrowth Proliferation and Early Differentiation in a Three-Dimensional Silicon Carbide Scaffold Using Low-Intensity Pulsed Ultrasound

机译:使用低强度脉冲超声增强三维碳化硅支架中细胞的生长增殖和早期分化

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摘要

Concerns over the use of autografts or allografts have necessitated the development of biomaterials for bone regeneration. Various studies have been performed to optimize the cultivation of osteogenic cells using osteoconductive porous scaffolds. The aim of this study was to evaluate the osteogenic efficiency of bone cell ingrowth, proliferation, and early differentiation in a silicon carbide (SiC) porous ceramic scaffold promoted with low-intensity pulsed ultrasound. MC3T3-E1 mouse preosteoblasts were seeded onto scaffolds and cultured for 4 and 7 days with daily of 20-min ultrasound treatment. The cells were evaluated for cell attachment, morphology, viability, ingrowth depth, volumetric proliferation, and early differentiation. After 4 and 7 days of culture and ultrasound exposure, the cell density was higher in the ultrasound-treated group compared with the sham-treated group on SiC scaffolds. The cell ingrowth depths inside the SiC scaffolds were 149.2±27.3 μm at 1 day, 310.1±12.6 μm for the ultrasound-treated group and 248.0±19.7 μm for the sham control at 4 days, and 359.6±18.5 μm for the ultrasound-treated group and 280.0±17.7 μm for the sham control at 7 days. They were significantly increased, that is, 25% (p=0.0029) and 28% (p=0.0008) increase, respectively, with ultrasound radiation force as compared with those in sham control at 4 and 7 days postseeding. The dsDNA contents were 583.5±19.1 ng/scaffold at 1 day, 2749.9±99.9 ng/scaffold for the ultrasound-treated group and 2514.9±114.7 ng/scaffold for the sham control at 4 days, and 3582.3±325.3 ng/scaffold for the ultrasound-treated group and 2825.7±134.3 ng/scaffold for the sham control at 7 days. There was a significant difference in the dsDNA content between the ultrasound- and sham-treated groups at 4 and 7 days. The ultrasound-treated group with the SiC construct showed a 9% (p=0.00029) and 27% (p=0.00017) increase in the average dsDNA content at 4 and 7 days over the sham control group, respectively. Alkaline phosphatase activity was significantly increased by the treatment of ultrasound at 4 (p=0.012) and 7 days (p=0.035). These results suggested that ultrasound treatment with low-intensity acoustic energy facilitated the cellular ingrowth and enhanced the proliferation and early differentiation of osteoblasts in SiC scaffolds.
机译:对于自体移植物或同种异体移植物的使用的担忧,需要开发用于骨再生的生物材料。已经进行了各种研究来优化使用骨传导性多孔支架的成骨细胞的培养。这项研究的目的是评估在低强度脉冲超声促进的碳化硅(SiC)多孔陶瓷支架中骨细胞向内生长,增殖和早期分化的成骨效率。将MC3T3-E1小鼠前成骨细胞接种到支架上,并每天进行20分钟的超声处理,培养4天和7天。评估细胞的细胞附着,形态,生存力,向内生长深度,体积增殖和早期分化。在培养和超声暴露4天和7天后,与SiC支架上的假处理组相比,超声处理组的细胞密度更高。 SiC支架内部的细胞向内生长深度在第1天为149.2±27.3μm,超声治疗组为310.1±12.6μm,假手术第4天为248.0±19.7μm,超声处理为359.6±18.5μm。第7天假手术对照组为280.0±17.7μm。与接种后第4天和第7天的假对照相比,它们的超声辐射力显着增加,即分别增加了25%(p = 0.0029)和28%(p = 0.0008)。第1天dsDNA含量为583.5±19.1ngng /支架,超声处理组为2749.9±99.9ngng /支架,假手术第4天为2514.9±114.7ngng /支架,第358天为3582.3±325.3ngng /支架。超声治疗7d,对照组为2825.7±134.3 ng /支架。在第4天和第7天,超声和假治疗组的dsDNA含量存在显着差异。与假对照组相比,用SiC构造物进行超声处理的组分别显示在第4天和第7天的dsDNA平均含量分别增加了9%(p = 0.00029)和27%(p = 0.00017)。在第4天(p = 0.012)和第7天(p = 0.035)进行超声处理后,碱性磷酸酶活性显着增加。这些结果表明,用低强度声能进行超声处理可促进细胞向内生长,并增强SiC支架中成骨细胞的增殖和早期分化。

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