Dealing with image shifting in 3D ToF-SIMS depth profiles

摘要

The high sputter efficiency and low damage of gas cluster ion beams have enabled depth profiling to greater depths within organic samples using time-of-flight secondary ion mass spectrometry (ToF-SIMS). Due to the typically fixed geometry of the ion sources used in ToF-SIMS, as one digs into a surface, the position sampled by ion beams shifts laterally. This causes a lateral shift in the resulting images that can become quite significant when profiling down more than one micron. Here, three methods to compensate for this image shifting are presented in order to more accurately stack the images to present a 3D representation. These methods include (1) using software to correct the image shifts post-acquisition, (2) correcting the sample height during acquisition, and (3) adjusting the beam position during acquisition. The advantages and disadvantages of these methods are discussed. It was found that all three methods were successful in compensating for image shifting in ToF-SIMS depth profiles resulting in a more accurate display of the 3D data. Features from spherical objects that were ellipsoidal prior to shifting were seen to be spherical after correction. Software shifting is convenient as it can be applied after data acquisition. However, when using software shifting, one must take into account the scan size and the size of the features of interest as image shifts can be significant and can result in cropping of features of interest. For depth profiles deeper than a few microns, hardware methods should be used as they preserve features of interest within the field of view regardless of the profile depth. Software shifting can also be used to correct for small shifts not accounted for by hardware methods. A combination of hardware and software shift correction can enable correction for a wide range of samples and profiling depths. The scripts required for the software shifting demonstrated herein are provided along with tutorials in the supplementary material.