首页> 美国卫生研究院文献>The Journal of Neuroscience >Dendritic Generation of mGluR-Mediated Slow Afterdepolarization in Layer 5 Neurons of Prefrontal Cortex
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Dendritic Generation of mGluR-Mediated Slow Afterdepolarization in Layer 5 Neurons of Prefrontal Cortex

机译:在前额叶皮层的第5层神经元中mGluR介导的缓慢后去极化的树突状生成。

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摘要

Many prefrontal cortex (PFC)-dependent tasks require individual neurons to fire persistently in response to brief stimuli. Persistent activity is proposed to involve changes in intrinsic properties, resulting in an increased sensitivity to inputs. The dendrite is particularly relevant to this hypothesis because it receives the majority of synaptic inputs and is enriched for conductances implicated in persistent firing. We provide evidence that dendritic conductances contribute to persistent activity-related changes in intrinsic properties. The effects of Group 1 metabotropic glutamate receptor (mGluR) activation on persistent activity-related properties were tested in two classes of rat L5 neurons with distinct membrane properties: those projecting to the pons (CPn) and those projecting across the commissure to the contralateral cortex (COM). mGluR activation produced long-term changes in the subthreshold properties of CPn, but not COM neurons. These changes were indicative of a decrease in hyperpolarization-activated cation nonselective current (Ih) at the soma and dendrite. mGluR activation also transiently increased the amplitude of the postburst slow afterdepolarization potential (sADP) at the soma of both neuron types. Interestingly, the sADP occurred along the extent of the apical dendrite in CPn and COM neurons. Simultaneous somatic/dendritic recordings revealed that the dendritic sADP does not result solely from passive propagation of the somatic sADP. Focal mGluR activation in L5, near the soma or at the border of L1/L2, near the tuft, generates a local sADP. This dendritic depolarization may act synergistically with synaptic input to regulate mnemonic activity in PFC.
机译:许多前额叶皮层(PFC)依赖的任务需要单个神经元持续响应短暂的刺激而激发。持久性活动被提议涉及内在属性的变化,从而导致对输入的敏感性增加。树突与此假设特别相关,因为它接受了大多数突触输入,并且丰富了与持续发射有关的电导。我们提供的证据表明,树突状电导有助于内在特性与持久性活动相关的变化。在具有不同膜特性的两类大鼠L5神经元中测试了1组代谢型谷氨酸受体(mGluR)激活对持久性活动相关特性的影响:突出到脑桥(CPn)的那些和穿过连合到对侧皮质的那些神经元。 (COM)。 mGluR激活在CPn的亚阈值特性中产生了长期变化,但未引起COM神经元的变化。这些变化表明在体和树突处超极化激活的阳离子非选择性电流(Ih)的降低。两种神经元类型的体细胞中,mGluR激活也会瞬时增加爆发后缓慢的去极化后电位(sADP)的幅度。有趣的是,sADP沿着CPn和COM神经元的顶端树突延伸。同时的体细胞/树突状记录显示,树突状sADP并非仅源于体细胞sADP的被动传播。 L5在躯体附近或L1 / L2的边界处(在簇附近)的局灶性mGluR激活会产生局部sADP。这种树突状去极化可以与突触输入协同作用,以调节PFC中的记忆功能。

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