Kelvin probe force microscopy work function characterization of transition metal oxide crystals under ongoing reduction and oxidation

摘要

Controlling the work function of transition metal oxides is of key importance with regard to future energy production and storage. As the majority of applications involve the use of heterostructures, the most suitable characterization technique is Kelvin probe force microscopy (KPFM), which provides excellent energetic and lateral resolution. In this paper, we demonstrate precise characterization of the work function using the example of artificially formed crystalline titanium monoxide (TiO) nanowires on strontium titanate (SrTiO3) surfaces, providing a sharp atomic interface. The measured value of 3.31(21) eV is the first experimental work function evidence for a cubic TiO phase, where significant variations among the different crystallographic facets were also observed. Despite the remarkable height of the TiO nanowires, KPFM was implemented to achieve a high lateral resolution of 15 nm, which is close to the topographical limit. In this study, we also show the unique possibility of obtaining work function and conductivity maps on the same area by combining noncontact and contact modes of atomic force microscopy (AFM). As most of the real applications require ambient operating conditions, we have additionally checked the impact of air venting on the work function of the TiO/SrTiO3(100) heterostructure, proving that surface reoxidation occurs and results in a work function increase of 0.9 eV and 0.6 eV for SrTiO3 and TiO, respectively. Additionally, the influence of adsorbed surface species was estimated to contribute 0.4 eV and 0.2 eV to the work function of both structures. The presented method employing KPFM and local conductivity AFM for the characterization of the work function of transition metal oxides may help in understanding the impact of reduction and oxidation on electronic properties, which is of high importance in the development of effective sensing and catalytic devices.