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Highly Sensitive Impact Sensor Based on PVDF-TrFE/Nano-ZnO Composite Thin Film

机译:基于PVDF-TrFE /纳米ZnO复合薄膜的高灵敏度冲击传感器

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摘要

A thin film of polyvinylidene fluoride-trifluoroethylene (PVDF-TrFE) has good flexibility and simple preparation process. More importantly, compared with PVDF, its piezoelectric β-phase can be easily formed without mechanical stretching. However, its piezoelectricity is relatively lower. Therefore, at present, PVDF-TrFE is always compounded with other kinds of piezoelectric materials to solve this problem. The effect of nano-ZnO doping amount on the sensing characteristics of the piezoelectric films was studied. PVDF-TrFEano-ZnO films with different nano-ZnO contents were prepared by spin coating process and packaged. The dispersion of nano-ZnO dopants and the crystallinity of β-phase in piezoelectric films with different nano-ZnO contents were observed by scanning electron microscopy and X-ray diffraction, and the piezoelectric strain constants and dielectric constants were measured, respectively. The effect of different nano-ZnO contents on the output performance of the piezoelectric sensor was obtained by a series of impact experiments. The results show that the piezoelectric strain constant and dielectric constant can be increased by doping nano-ZnO in PVDF-TrFE. Moreover, the doping amount of nano-ZnO in PVDF-TrFE is of great significance for improving the piezoelectric properties of PVDF-TrFEano-ZnO thin films. Among the prepared piezoelectric films, the output voltage of PVDF-TrFEano-ZnO piezoelectric sensor with 7.5% nano-ZnO doping amount is about 5.5 times that of pure PVDF-TrFE. Thus, the optimal range of the doping amount for nano-ZnO is about 4–10%.
机译:聚偏二氟乙烯-三氟乙烯(PVDF-TrFE)薄膜具有良好的柔韧性和简单的制备工艺。更重要的是,与PVDF相比,无需机械拉伸即可容易地形成其压电β相。但是,其压电性相对较低。因此,目前,PVDF-TrFE总是与其他种类的压电材料混合以解决该问题。研究了纳米ZnO掺杂量对压电薄膜传感特性的影响。通过旋涂工艺制备并包装了具有不同纳米ZnO含量的PVDF-TrFE /纳米ZnO薄膜。通过扫描电子显微镜和X射线衍射观察了不同ZnO含量的压电薄膜中纳米ZnO掺杂剂的分散性和β相的结晶度,并分别测量了压电应变常数和介电常数。通过一系列的冲击实验,获得了不同的纳米ZnO含量对压电传感器输出性能的影响。结果表明,在PVDF-TrFE中掺杂纳米ZnO可以提高压电应变常数和介电常数。此外,PVDF-TrFE中纳米ZnO的掺杂量对改善PVDF-TrFE /纳米ZnO薄膜的压电性能具有重要意义。在制备的压电薄膜中,掺杂有7.5%纳米ZnO的PVDF-TrFE /纳米ZnO压电传感器的输出电压约为纯PVDF-TrFE的5.5倍。因此,纳米ZnO的最佳掺杂量范围约为4-10%。

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