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Simultaneous Optimization of Nanocrystalline SnO2 Thin Film Deposition Using Multiple Linear Regressions

机译:利用多个线性回归同时优化纳米晶SnO2薄膜沉积

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摘要

A nanocrystalline SnO2 thin film was synthesized by a chemical bath method. The parameters affecting the energy band gap and surface morphology of the deposited SnO2 thin film were optimized using a semi-empirical method. Four parameters, including deposition time, pH, bath temperature and tin chloride (SnCl2·2H2O) concentration were optimized by a factorial method. The factorial used a Taguchi OA (TOA) design method to estimate certain interactions and obtain the actual responses. Statistical evidences in analysis of variance including high F-value (4,112.2 and 20.27), very low P-value (<0.012 and 0.0478), non-significant lack of fit, the determination coefficient (R2 equal to 0.978 and 0.977) and the adequate precision (170.96 and 12.57) validated the suggested model. The optima of the suggested model were verified in the laboratory and results were quite close to the predicted values, indicating that the model successfully simulated the optimum conditions of SnO2 thin film synthesis.
机译:通过化学浴法合成纳米晶SnO 2薄膜。使用半经验方法优化了影响沉积的SnO2薄膜的能带隙和表面形态的参数。通过析因法优化了沉积时间,pH,浴温和氯化锡(SnCl2·2H2O)浓度四个参数。阶乘使用Taguchi OA(TOA)设计方法来估计某些相互作用并获得实际响应。方差分析的统计证据包括高F值(4,112.2和20.27),非常低的P值(<0.012和0.0478),不显着缺乏拟合度,确定系数(R 2 等于至0.978和0.977)和足够的精度(170.96和12.57)验证了建议的模型。在实验室中验证了所建议模型的最优性,结果与预测值非常接近,表明该模型成功模拟了SnO2薄膜合成的最佳条件。

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