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Development and Application of Integrated Optical Sensors for Intense E-Field Measurement

机译:用于强电场测量的集成光学传感器的开发和应用

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摘要

The measurement of intense E-fields is a fundamental need in various research areas. Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection. This paper comprehensively reviews the development and applications of several types of IOESs over the last 30 years, including the Mach-Zehnder interferometer (MZI), coupler interferometer (CI) and common path interferometer (CPI). The features of the different types of IOESs are compared, showing that the MZI has higher sensitivity, the CI has a controllable optical bias, and the CPI has better temperature stability. More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated. Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.
机译:在各个研究领域,对强电场的测量是基本需求。集成的光学电场传感器(IOES)具有重要的优势,并且可能适用于密集的电场检测。本文全面回顾了过去30年中几种类型的IOES的开发和应用,包括Mach-Zehnder干涉仪(MZI),耦合器干涉仪(CI)和共径干涉仪(CPI)。比较了不同类型的IOES的特性,表明MZI具有更高的灵敏度,CI具有可控的光学偏置,而CPI具有更好的温度稳定性。更具体地说,说明了将IOES应用于强电场测量的改进工作。最后,演示了IOES在强电场测量中的典型用途,包括应用领域,例如高压工程中不同频率范围的电场,大功率电磁脉冲中的模拟核电磁脉冲以及离子加速高能物理领域。

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