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Band gap formation and Anderson localization in disordered photonic materials with structural correlations

机译:具有结构相关性的无序光子材料中的带隙形成和安德森局部化

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摘要

Disordered dielectric materials with structural correlations show unconventional optical behavior: They can be transparent to long-wavelength radiation, while at the same time have isotropic band gaps in another frequency range. This phenomenon raises fundamental questions concerning photon transport through disordered media. While optical transparency in these materials is robust against recurrent multiple scattering, little is known about other transport regimes like diffusive multiple scattering or Anderson localization. Here, we investigate band gaps, and we report Anderson localization in 2D disordered dielectric structures using numerical simulations of the density of states and optical transport statistics. The disordered structures are designed with different levels of positional correlation encoded by the degree of stealthiness χ. To establish a unified view, we propose a correlation-frequency (χ–ν) transport phase diagram. Our results show that, depending only on χ, a dielectric material can transition from localization behavior to a band gap crossing an intermediate regime dominated by tunneling between weakly coupled states.
机译:具有结构相关性的无序介电材料显示出非常规的光学行为:它们对长波长辐射可能是透明的,而同时在另一个频率范围内具有各向同性的带隙。这种现象提出了有关光子通过无序介质传输的基本问题。尽管这些材料的光学透明性可抵抗反复多次散射,但对其他传输方式(例如多次散射或安德森定位)知之甚少。在这里,我们研究带隙,并使用状态密度的数值模拟和光传输统计来报告2D无序介电结构中的安德森局部化。设计的无序结构具有不同级别的位置相关性,这些位置相关性由隐身度χ编码。为了建立统一的观点,我们提出了一个相关频率(χ-ν)传输相图。我们的结果表明,仅取决于χ,介电材料可以从定位行为过渡到带隙,该带隙跨越由弱耦合状态之间的隧穿控制的中间态。

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