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On-chip excitation of single germanium vacancies in nanodiamonds embedded in plasmonic waveguides

机译:等离子体波导中嵌入的纳米金刚石中单锗空位的片上激发

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摘要

Monolithic integration of quantum emitters in nanoscale plasmonic circuitry requires low-loss plasmonic configurations capable of confining light well below the diffraction limit. We demonstrated on-chip remote excitation of nanodiamond-embedded single quantum emitters by plasmonic modes of dielectric ridges atop colloidal silver crystals. The nanodiamonds were produced to incorporate single germanium-vacancy (GeV) centres, providing bright, spectrally narrow and stable single-photon sources suitable for highly integrated circuits. Using electron-beam lithography with hydrogen silsesquioxane (HSQ) resist, dielectric-loaded surface plasmon polariton waveguides (DLSPPWs) were fabricated on single crystalline silver plates to contain those of deposited nanodiamonds that are found to feature appropriate single GeV centres. The low-loss plasmonic configuration enabled the 532-nm pump laser light to propagate on-chip in the DLSPPW and reach to an embedded nanodiamond where a single GeV centre was incorporated. The remote GeV emitter was thereby excited and coupled to spatially confined DLSPPW modes with an outstanding figure-of-merit of 180 due to a ~six-fold Purcell enhancement, ~56% coupling efficiency and ~33 μm transmission length, thereby opening new avenues for the implementation of nanoscale functional quantum devices.
机译:纳米级等离激元电路中的量子发射器的单片集成需要能够将光限制在远低于衍射极限的低损耗等离激元配置。我们通过胶体银晶体顶上的电介质脊的等离激元模式展示了纳米金刚石嵌入式单量子发射器的片上远程激发。生产的纳米金刚石结合了单个锗空位(GeV)中心,从而提供了适用于高度集成电路的明亮,光谱狭窄且稳定的单光子源。使用具有氢倍半硅氧烷(HSQ)抗蚀剂的电子束光刻技术,在单晶银板上制造了负载电介质的表面等离激元极化波导(DLSPPW),以包含已沉积的具有合适的单个GeV中心的纳米金刚石。低损耗的等离子体配置使532 nm泵浦激光能够在DLSPPW中在芯片上传播,并到达嵌入了单个GeV中心的嵌入式纳米金刚石。从而,远程GeV发射器被激发并耦合到空间受限的DLSPPW模式,其品质因数提高了约6倍,而赛尔增强了约56%,耦合效率达到了约33μm,传输距离增加,从而获得了优异的品质因数,从而开辟了新的途径用于实现纳米级功能量子器件。

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