首页> 美国卫生研究院文献>Cognitive Neurodynamics >Short term memory may be the depletion of the readily releasable pool of presynaptic neurotransmitter vesicles of a metastable long term memory trace pattern
【2h】

Short term memory may be the depletion of the readily releasable pool of presynaptic neurotransmitter vesicles of a metastable long term memory trace pattern

机译:短期记忆可能是亚稳态长期记忆痕迹模式中易释放的突触前神经递质囊泡池的消耗

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

The Tagging/Retagging model of short term memory was introduced earlier (Tarnow in Cogn Neurodyn 2(4):347–353, ) to explain the linear relationship between response time and correct response probability for word recall and recognition: At the initial stimulus presentation the words displayed tag the corresponding long term memory locations. The tagging process is linear in time and takes about one second to reach a tagging level of 100%. After stimulus presentation the tagging level decays logarithmically with time to 50% after 14 s and to 20% after 220 s. If a probe word is reintroduced the tagging level has to return to 100% for the word to be properly identified, which leads to a delay in response time. This delay is proportional to the tagging loss. The tagging level is directly related to the probability of correct word recall and recognition. Evidence presented suggests that the tagging level is the level of depletion of the Readily Releasable Pool (RRP) of neurotransmitter vesicles at presynaptic terminals. The evidence includes the initial linear relationship between tagging level and time as well as the subsequent logarithmic decay of the tagging level. The activation of a short term memory may thus be the depletion of RRP (exocytosis) and short term memory decay may be the ensuing recycling of the neurotransmitter vesicles (endocytosis). The pattern of depleted presynaptic terminals corresponds to the long term memory trace.
机译:早期记忆的标记/重新标记模型是较早引入的(Tarnow in Cogn Neurodyn 2(4):347-353,),用于解释响应时间与单词回忆和识别的正确响应概率之间的线性关系:在最初的刺激演示中显示的字标记相应的长期存储位置。标记过程在时间上是线性的,大约需要一秒钟才能达到100%的标记水平。刺激提示后,标记水平随时间呈对数衰减,在14s之后逐渐下降到50%,在220s之后逐渐下降到20%。如果重新引入探测词,则标记级别必须返回到100%,才能正确识别该词,这会导致响应时间延迟。该延迟与标记损失成正比。标签级别与正确的单词回忆和识别的可能性直接相关。提出的证据表明,标记水平是突触前末端神经递质囊泡的可释放池(RRP)的耗竭水平。证据包括标记水平和时间之间的初始线性关系,以及标记水平的后续对数衰减。因此,短期记忆的激活可能是RRP的耗竭(胞吐作用),而短期记忆衰减可能是随后的神经递质囊泡回收(胞吞作用)。突触前末端耗尽的模式对应于长期记忆轨迹。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号