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Systematic analysis of the contributions of stochastic voltage gated channels to neuronal noise

机译:系统分析随机电压门控通道对神经元噪声的影响

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摘要

Electrical signaling in neurons is mediated by the opening and closing of large numbers of individual ion channels. The ion channels' state transitions are stochastic and introduce fluctuations in the macroscopic current through ion channel populations. This creates an unavoidable source of intrinsic electrical noise for the neuron, leading to fluctuations in the membrane potential and spontaneous spikes. While this effect is well known, the impact of channel noise on single neuron dynamics remains poorly understood. Most results are based on numerical simulations. There is no agreement, even in theoretical studies, on which ion channel type is the dominant noise source, nor how inclusion of additional ion channel types affects voltage noise. Here we describe a framework to calculate voltage noise directly from an arbitrary set of ion channel models, and discuss how this can be use to estimate spontaneous spike rates.
机译:神经元中的电信号传导是通过打开和关闭大量单个离子通道来介导的。离子通道的状态转换是随机的,并通过离子通道总体在宏观电流中引起波动。这为神经元创造了不可避免的内在电噪声源,从而导致膜电位的波动和自发的尖峰。尽管这种效应是众所周知的,但对于单个神经元动力学的通道噪声的影响仍然知之甚少。大多数结果基于数值模拟。即使在理论研究中,也没有关于哪种离子通道类型是主要噪声源的共识,也没有关于包含其他离子通道类型如何影响电压噪声的共识。在这里,我们描述了一个直接从任意离子通道模型集中计算电压噪声的框架,并讨论了如何将其用于估算自发尖峰频率。

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