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Thermal Stability and Thermoelectric Properties of NaZnSb

机译:NaZnSb的热稳定性和热电性能

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摘要

A layered Zintl antimonide NaZnSb (PbClF or Cu2Sb structure type; P4mm) was synthesized using the reactive sodium hydride NaH precursor. This method provides comprehensive compositional control and facilitates the fast preparation of high-purity samples in large quantities. NaZnSb is highly reactive to humidity/air and hydrolyzes to NaOH, ZnO, and Sb in aerobic conditions. On the other hand, NaZnSb is thermally stable up to 873 K in vacuum, as no structural changes were observed from high-temperature synchrotron powder X-ray diffraction data in the 300–873 K temperature range. The unit cell expansion upon heating is isotropic; however, interatomic distance elongation is not isotropic, consistent with the layered structure. Low- and high-temperature thermoelectric properties were measured on pellets densified by spark plasma sintering. The resistivity of NaZnSb ranges from 11 mΩ∙cm to 31 mΩ∙cm within the 2–676 K range, consistent with heavily doped semiconductor behavior, with a narrow band gap of 0.23 eV. NaZnSb has a large positive Seebeck coefficient (244 μV∙K−1 at 476 K), leading to the maximum of zT of 0.23 at 675 K. The measured thermoelectric properties are in good agreement with those predicted by theoretical calculations.
机译:使用反应性氢化钠NaH前驱体合成了层状Zintl锑化NaNaSb(PbClF或Cu2Sb结构类型; P4 / nmm)。该方法提供了全面的成分控制,并有助于快速制备大量的高纯度样品。 NaZnSb对湿度/空气具有高反应性,并在有氧条件下水解为NaOH,ZnO和Sb。另一方面,由于在300–873 K温度范围内的高温同步加速器粉末X射线衍射数据中未观察到结构变化,因此NaZnSb在真空中直至873 K都具有热稳定性。加热时的晶胞膨胀是各向同性的。但是,原子间距离的延伸不是各向同性的,与层状结构一致。在通过火花等离子体烧结致密化的粒料上测量了低温和高温热电性质。在2–676 K范围内,NaZnSb的电阻率范围为11mΩ∙cm至31mΩ∙cm,与重掺杂半导体行为一致,窄带隙为0.23 eV。 NaZnSb具有很大的正塞贝克系数(在476 K时为244μV∙K -1 ),导致在675 K时zT的最大值为0.23。测得的热电性能与通过理论计算。

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