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Two-Dimensional Tetragonal GaN as Potential MoleculeSensors for NO and NO2 Detection: A First-Principle Study

机译:二维四方氮化镓作为潜在分子用于NO和NO2检测的传感器:首要原理研究

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摘要

Properties of gas molecules (NO, NH3, and NO2) adsorbed on two-dimensional GaN with a tetragonal structure (T-GaN) are studied using first-principles methods. Adsorption energy, adsorption distance, Hirshfeld charge, electronic properties, electric conductivity, and recovery time are calculated. It is found that these three molecules are all chemisorbed on the T-GaN with reasonable adsorption energies and apparent charge transfer. The electronic properties of the T-GaN present dramatic changes after the adsorption of NO2 and NO molecules, especially its electric conductivity, but NH3 molecule hardly changes the electronic properties of the T-GaN. Furthermore, the recovery time of the T-GaN sensor at T = 300 K is estimated to be quite short for NO2 and NO but very long for NH3. Moreover, the magnetic properties of the T-GaN are changed obviously due to the adsorption of NO (or NO2) molecule. Therefore, we suggest that the T-GaN can be a prominent candidate for application as NO2 and NO molecule sensors.
机译:使用第一原理方法研究了吸附在具有四方结构的二维GaN(T-GaN)上的气体分子(NO,NH3和NO2)的特性。计算出吸附能,吸附距离,Hirshfeld电荷,电子性质,电导率和恢复时间。发现这三个分子均以合理的吸附能和表观电荷转移被化学吸附在T-GaN上。在吸附了NO2和NO分子后,T-GaN的电子性质发生了巨大变化,尤其是其导电性,但是NH3分子几乎不会改变T-GaN的电子性质。此外,对于NO2和NO,T-GaN传感器在T = 300 K时的恢复时间估计很短,而对于NH3则很长。而且,由于NO(或NO 2)分子的吸附,T-GaN的磁性能明显改变。因此,我们建议T-GaN可以作为NO2和NO分子传感器的重要应用。

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