IndiumTin Oxide Nanowire Networks as Effective UV/VisPhotodetection Platforms

摘要

We demonstrate that indium tin oxide nanowires (ITO NWs) and cationic polymer-modified ITO NWs configured in a network format can be used as high performing UV/vis photodetectors. The photovoltage response of ITO NWs is much higher than similarly constructed devices made from tin oxide, zinc tin oxide, and zinc oxide nanostructures. The ITO NW mesh-based devices exhibit a substantial photovoltage (31–100 mV under illumination with a 1.14 mW 543 nm laser) and photocurrent (225–325 μA at 3 V). The response time of the devices is fast with a rise time of 20–30 μs and a decay time of 1.5–3.7 ms when probed with a 355 nm pulsed laser. The photoresponsivity of the ITO NW devices ranges from 0.07 to 0.2 A/W at a 3 V bias, whose values are in the performance range of most commercial UV/vis photodetectors. Such useful photodetector characteristics from our ITO NW mesh devices are attained straightforwardly without the need for complicated fabrication procedures involving highly specialized lithographic tools. Therefore, our approach of ITO NW network-based photodetectors can serve as aconvenient alternative to commercial or single NW-based devices.