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In Situ Graphene Growth Dynamics on PolycrystallineCatalyst Foils

机译:多晶硅上原位石墨烯的生长动力学催化剂箔

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摘要

The dynamics of graphene growth on polycrystalline Pt foils during chemical vapor deposition (CVD) are investigated using in situ scanning electron microscopy and complementary structural characterization of the catalyst with electron backscatter diffraction. A general growth model is outlined that considers precursor dissociation, mass transport, and attachment to the edge of a growing domain. We thereby analyze graphene growth dynamics at different length scales and reveal that the rate-limiting step varies throughout the process and across different regions of the catalyst surface, including different facets of an individual graphene domain. The facets that define the domain shapes lie normal to slow growth directions, which are determined by the interfacial mobility when attachment to domain edges is rate-limiting, as well as anisotropy in surface diffusion as diffusion becomes rate-limiting. Our observations and analysis thus reveal that the structure of CVD graphene films is intimately linked to that of the underlying polycrystalline catalyst, with both interfacial mobility and diffusional anisotropydepending on the presence of step edges and grain boundaries. Thegrowth model developed serves as a general framework for understandingand optimizing the growth of 2D materials on polycrystalline catalysts.
机译:使用原位扫描电子显微镜和利用电子背散射衍射对催化剂进行互补的结构表征,研究了化学气相沉积(CVD)过程中多晶Pt箔上石墨烯生长的动力学。概述了一个一般的生长模型,该模型考虑了前体的解离,传质以及对生长域边缘的附着。因此,我们分析了石墨烯在不同长度尺度上的生长动力学,并揭示了限速步骤在整个过程中以及在催化剂表面的不同区域(包括单个石墨烯域的不同方面)之间都发生了变化。定义畴形状的刻面垂直于慢速生长方向,当与畴边缘的附着受到速率限制时,这取决于界面迁移率,而随着扩散成为速率限制,则表面扩散的各向异性也决定了它们。因此,我们的观察和分析表明,CVD石墨烯膜的结构与下面的多晶催化剂紧密相连,具有界面迁移率和扩散各向异性取决于台阶边缘和晶界的存在。的建立的增长模型是理解的一般框架并优化2D材料在多晶催化剂上的生长。

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