Silicon photonics, one of the most promising candidates forbreaking the bottleneck of current optical transmission systems, has been developing rapidly in both performance andmaturity. The analysis and design of the two key componentsof this technology, the optical modulator and detector, are presented in this paper. The Mach-Zehnder modulator with Utype PN junction is optimized to obtain the modulation efficiency of 0.559 V·cm. The electro-optical 3 dB bandwidth ofthis device is 30 GHz. The simulation of the PIN waveguideSi based Ge photodetector at 1.55 μm wavelength is also presented. The device shows a very low dark current of about 10 nA-at1 V, and the obtained responsivity and 3 dB bandwidth are appreciable. These results practically meet the requirement of commercial 100 Gb/s optical transmission systems.
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