改性含钪薄膜阴极的研究

摘要

采用Sc6 WO12 +W代替传统的Sc2WO3+W材料制备溅射靶,利用三极直流溅射方法制备含钪薄膜阴极.这种方法不需要在覆膜过程中通入氧气或采取其它的复杂氧化工艺,不仅简化了操作也提高了阴极制备的稳定性和一致性.本文研究了这种阴极的发射特性和功函数分布情况.这种阴极在1000℃时能提供86 A/cm2的发射电流密度,表现出良好的发射性能.%This paper presents a modified method to manufacture Scandia-tungsten coated dispenser cathode, which uses triode DC sputtering to deposit a Sc-containing film on traditional BaW dispenser cathode with Sc6 WO12 +W target instead of Sc2O3 +W target. This method simplifies the operation of film depositing and enhances the stability and consistency of coating Sc-type cathode for it needn't introduce oxygen or take other complicated oxidation techniques during the process of film depositing. We also study the emission property and work function of this cathode. It provides 86 A/cm2 current density at a cathode temperature of 1 000℃, which shows excellent emission capability.