850 nm Implant-confined VCSEL Temperature Characteristics

摘要

The temperature characteristics of VCSEL using proton implantation are described, compared with its edge-emitting counterpart. Implant-confined VCSEL operation has been realized up to 120 ℃. These records of high operating temperature are caused by high characteristic temperature. The relevant physical mechanisms including their dependence on temperature and carrier density are considered. The temperature sensitivity of the threshold current is not strongly increasing with higher temperature.